TY - JOUR
T1 - Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET
AU - Liang, Yuhua
AU - Li, Xueqing
AU - George, Sumitha
AU - Srinivasa, Srivatsa
AU - Zhu, Zhangming
AU - Gupta, Sumeet Kumar
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Funding Information:
Manuscript received March 6, 2018; revised May 22, 2018; accepted June 25, 2018. Date of publication August 3, 2018; date of current version August 21, 2018. This work was supported in part by “The National Science Foundation of China” under Grant 61604111, in part by “The Fundamental Research Funds for the Central Universities” under Grant JBX171104, in part by the Center for Low Energy Systems Technology, one of the SRC Centers Research on Intelligent Storage and Processing-in-memory, and in part by the Beijing Innovation Center for Future Chips. The review of this paper was arranged by Editor R. M. Todi. (Corresponding authors: Z. Zhu; V. Narayanan.) Y. Liang and Z. Zhu are with the School of Microelectronics, Xid-ian University, Xi’an 710071, China (e-mail: yhliang@xidian.edu.cn; zmyh@263.net).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2018/9
Y1 - 2018/9
N2 - Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply (Vdd), results show that the variation of the on resistance of the bootstrapped switch is about 67Ω during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch.
AB - Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply (Vdd), results show that the variation of the on resistance of the bootstrapped switch is about 67Ω during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch.
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U2 - 10.1109/TED.2018.2852679
DO - 10.1109/TED.2018.2852679
M3 - Article
AN - SCOPUS:85051001981
SN - 0018-9383
VL - 65
SP - 3909
EP - 3914
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
M1 - 8424879
ER -