Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET

Yuhua Liang, Xueqing Li, Sumitha George, Srivatsa Srinivasa, Zhangming Zhu, Sumeet Kumar Gupta, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply (Vdd), results show that the variation of the on resistance of the bootstrapped switch is about 67Ω during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch.

Original languageEnglish (US)
Article number8424879
Pages (from-to)3909-3914
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume65
Issue number9
DOIs
StatePublished - Sep 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET'. Together they form a unique fingerprint.

Cite this