Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

Xiaotian Zhang, Zakaria Y. Al Balushi, Fu Zhang, Tanushree H. Choudhury, Sarah M. Eichfeld, Nasim Alem, Thomas N. Jackson, Joshua A. Robinson, Joan M. Redwing

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

Original languageEnglish (US)
Pages (from-to)6273-6279
Number of pages7
JournalJournal of Electronic Materials
Volume45
Issue number12
DOIs
StatePublished - Dec 1 2016

Fingerprint

Graphite
Metallorganic chemical vapor deposition
Graphene
metalorganic chemical vapor deposition
Carbon
Thin films
Tungsten
carbon
Monolayers
thin films
graphene
selenides
Aluminum Oxide
Growth temperature
Coalescence
tungsten
Interfacial energy
Sapphire
Transition metals
Hydrogen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{e38fc6df6cd648b5851fafd64482a1a9,
title = "Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films",
abstract = "Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.",
author = "Xiaotian Zhang and {Al Balushi}, {Zakaria Y.} and Fu Zhang and Choudhury, {Tanushree H.} and Eichfeld, {Sarah M.} and Nasim Alem and Jackson, {Thomas N.} and Robinson, {Joshua A.} and Redwing, {Joan M.}",
year = "2016",
month = "12",
day = "1",
doi = "10.1007/s11664-016-5033-0",
language = "English (US)",
volume = "45",
pages = "6273--6279",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "12",

}

Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films. / Zhang, Xiaotian; Al Balushi, Zakaria Y.; Zhang, Fu; Choudhury, Tanushree H.; Eichfeld, Sarah M.; Alem, Nasim; Jackson, Thomas N.; Robinson, Joshua A.; Redwing, Joan M.

In: Journal of Electronic Materials, Vol. 45, No. 12, 01.12.2016, p. 6273-6279.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

AU - Zhang, Xiaotian

AU - Al Balushi, Zakaria Y.

AU - Zhang, Fu

AU - Choudhury, Tanushree H.

AU - Eichfeld, Sarah M.

AU - Alem, Nasim

AU - Jackson, Thomas N.

AU - Robinson, Joshua A.

AU - Redwing, Joan M.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

AB - Metalorganic chemical vapor deposition (MOCVD) is a promising technique to form large-area, uniform films of monolayer or few-layer transition metal dichalcogenide (TMD) thin films; however, unintentional carbon incorporation is a concern. In this work, we report the presence of a defective graphene layer that forms simultaneously during MOCVD growth of tungsten diselenide (WSe2) on sapphire at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. The use of hydrogen selenide (H2Se) instead of DMSe eliminates the defective graphene layer enabling coalesced monolayer and few-layer WSe2 films.

UR - http://www.scopus.com/inward/record.url?scp=84991785883&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991785883&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-5033-0

DO - 10.1007/s11664-016-5033-0

M3 - Article

AN - SCOPUS:84991785883

VL - 45

SP - 6273

EP - 6279

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -