Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models

M. Städele, B. Fischer, B. R. Tuttle, K. Hess

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We study theoretically the influence of neutral oxygen vacancies on the magnitude of elastic tunneling currents through the ultrathin (1.3 nm) gate oxide of a prototypical metal-oxide field-effect transistor with a channel length of 50 nm. For the calculation of the gate currents, we have used transmission coefficients obtained from three-dimensional semiempirical tight-binding calculations for a model Si-SiO2-Si junction, and electron distribution functions based on full-band Monte-Carlo transport simulations. The positions of the atoms in the junction were determined by first-principles density-functional calculations. It is found that the gate currents increase significantly (by typically one to three orders of magnitude) in the presence of vacancies having a density around 1012 cm-2, provided that the resonant energy levels lie less than 1 eV above the Si conduction band edge.

Original languageEnglish (US)
Pages (from-to)517-524
Number of pages8
JournalSuperlattices and Microstructures
Volume28
Issue number5-6
DOIs
StatePublished - Nov 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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