Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models

M. Städele, B. Fischer, B. R. Tuttle, K. Hess

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We study theoretically the influence of neutral oxygen vacancies on the magnitude of elastic tunneling currents through the ultrathin (1.3 nm) gate oxide of a prototypical metal-oxide field-effect transistor with a channel length of 50 nm. For the calculation of the gate currents, we have used transmission coefficients obtained from three-dimensional semiempirical tight-binding calculations for a model Si-SiO2-Si junction, and electron distribution functions based on full-band Monte-Carlo transport simulations. The positions of the atoms in the junction were determined by first-principles density-functional calculations. It is found that the gate currents increase significantly (by typically one to three orders of magnitude) in the presence of vacancies having a density around 1012 cm-2, provided that the resonant energy levels lie less than 1 eV above the Si conduction band edge.

Original languageEnglish (US)
Pages (from-to)517-524
Number of pages8
JournalSuperlattices and Microstructures
Volume28
Issue number5-6
DOIs
StatePublished - Nov 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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