Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors

R. M. Chu, Y. G. Zhou, Y. D. Zheng, P. Han, B. Shen, S. L. Gu

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

A study of two-dimensional electron gas distribution in AlGaN/GaN heterostructure field effect transistors is performed by solving the coupled Schrödinger's and Poisson's equation self-consistently. Taking the piezoelectric effect into account, the two-dimensional electron gas concentration is calculated to be as high as 1019 cm-3. To gain an understanding on how the two-dimensional electron gas distribution is influenced by dopant concentration in material, we observed the two-dimensional electron gas concentration and occupation of subbands versus doping level in GaN and in AlGaN layer. The results show that the two-dimensional electron gas concentration depends much more strongly on the doping level in AlGaN than in GaN. And besides, the heavier doping in GaN should weaken the quantum confinement in the AlGaN/GaN heterointerface.

Original languageEnglish (US)
Pages (from-to)2270-2272
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number14
DOIs
StatePublished - Oct 1 2001

Fingerprint

electron gas
transistors
Poisson equation
occupation
field effect transistors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chu, R. M. ; Zhou, Y. G. ; Zheng, Y. D. ; Han, P. ; Shen, B. ; Gu, S. L. / Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors. In: Applied Physics Letters. 2001 ; Vol. 79, No. 14. pp. 2270-2272.
@article{dc5a839bad8143e6bc05ca7c0352c9d9,
title = "Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors",
abstract = "A study of two-dimensional electron gas distribution in AlGaN/GaN heterostructure field effect transistors is performed by solving the coupled Schr{\"o}dinger's and Poisson's equation self-consistently. Taking the piezoelectric effect into account, the two-dimensional electron gas concentration is calculated to be as high as 1019 cm-3. To gain an understanding on how the two-dimensional electron gas distribution is influenced by dopant concentration in material, we observed the two-dimensional electron gas concentration and occupation of subbands versus doping level in GaN and in AlGaN layer. The results show that the two-dimensional electron gas concentration depends much more strongly on the doping level in AlGaN than in GaN. And besides, the heavier doping in GaN should weaken the quantum confinement in the AlGaN/GaN heterointerface.",
author = "Chu, {R. M.} and Zhou, {Y. G.} and Zheng, {Y. D.} and P. Han and B. Shen and Gu, {S. L.}",
year = "2001",
month = "10",
day = "1",
doi = "10.1063/1.1406978",
language = "English (US)",
volume = "79",
pages = "2270--2272",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors. / Chu, R. M.; Zhou, Y. G.; Zheng, Y. D.; Han, P.; Shen, B.; Gu, S. L.

In: Applied Physics Letters, Vol. 79, No. 14, 01.10.2001, p. 2270-2272.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors

AU - Chu, R. M.

AU - Zhou, Y. G.

AU - Zheng, Y. D.

AU - Han, P.

AU - Shen, B.

AU - Gu, S. L.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - A study of two-dimensional electron gas distribution in AlGaN/GaN heterostructure field effect transistors is performed by solving the coupled Schrödinger's and Poisson's equation self-consistently. Taking the piezoelectric effect into account, the two-dimensional electron gas concentration is calculated to be as high as 1019 cm-3. To gain an understanding on how the two-dimensional electron gas distribution is influenced by dopant concentration in material, we observed the two-dimensional electron gas concentration and occupation of subbands versus doping level in GaN and in AlGaN layer. The results show that the two-dimensional electron gas concentration depends much more strongly on the doping level in AlGaN than in GaN. And besides, the heavier doping in GaN should weaken the quantum confinement in the AlGaN/GaN heterointerface.

AB - A study of two-dimensional electron gas distribution in AlGaN/GaN heterostructure field effect transistors is performed by solving the coupled Schrödinger's and Poisson's equation self-consistently. Taking the piezoelectric effect into account, the two-dimensional electron gas concentration is calculated to be as high as 1019 cm-3. To gain an understanding on how the two-dimensional electron gas distribution is influenced by dopant concentration in material, we observed the two-dimensional electron gas concentration and occupation of subbands versus doping level in GaN and in AlGaN layer. The results show that the two-dimensional electron gas concentration depends much more strongly on the doping level in AlGaN than in GaN. And besides, the heavier doping in GaN should weaken the quantum confinement in the AlGaN/GaN heterointerface.

UR - http://www.scopus.com/inward/record.url?scp=0035473595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035473595&partnerID=8YFLogxK

U2 - 10.1063/1.1406978

DO - 10.1063/1.1406978

M3 - Article

AN - SCOPUS:0035473595

VL - 79

SP - 2270

EP - 2272

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -