Influence of external electric fields on electronic response and bandstructure of carbon nanotubes

Yan Li, Vyacheslav Rotkin, U. Ravaioli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We performed tight-binding calculation of the electronic properties of carbon nanotubes in a perpendicular electric field. Within the linear response limit, the dielectric function of a doped carbon nanotube is found to depend not only on its symmetry, but also on the Fermi level position and tube radius. Upon increasing the field, the mixing of neighboring sub bands results in metal-semiconductor transitions in both quasi-metallic and semiconducting nanotubes. The characteristic field strength of the transitions is calculated as a function of the tube radius. An optimal radius range to be used for band gap engineering is estimated for both types.

Original languageEnglish (US)
Title of host publication2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
PublisherIEEE Computer Society
Pages1-4
Number of pages4
ISBN (Electronic)0780379764
DOIs
StatePublished - Jan 1 2003
Event2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States
Duration: Aug 12 2003Aug 14 2003

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume1
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
CountryUnited States
CitySan Francisco
Period8/12/038/14/03

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Li, Y., Rotkin, V., & Ravaioli, U. (2003). Influence of external electric fields on electronic response and bandstructure of carbon nanotubes. In 2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings (pp. 1-4). [1231699] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/NANO.2003.1231699