Influence of film thickness on the magnitude and aging behavior of the transverse piezoelectric coefficient (d31) of PZT thin films

J. F. Shepard, F. Chu, P. J. Moses, Susan E. Trolier-McKinstry

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from -60 to -90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31 coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.

Original languageEnglish (US)
Pages (from-to)415-420
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume493
StatePublished - Jan 1 1998
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

Fingerprint

Film thickness
film thickness
Aging of materials
flexing
Thin films
coefficients
thin films
wafers
Silicon
pressure oscillations
electromagnetic noise
Electric charge
silicon
electric charge
Sol-gels
gels
Substrates
electronics
Experiments

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Influence of film thickness on the magnitude and aging behavior of the transverse piezoelectric coefficient (d31) of PZT thin films",
abstract = "The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from -60 to -90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31 coefficients were also conducted and results showed values to be on the order of 4 to 8{\%} per decade.",
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year = "1998",
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Influence of film thickness on the magnitude and aging behavior of the transverse piezoelectric coefficient (d31) of PZT thin films. / Shepard, J. F.; Chu, F.; Moses, P. J.; Trolier-McKinstry, Susan E.

In: Materials Research Society Symposium - Proceedings, Vol. 493, 01.01.1998, p. 415-420.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Influence of film thickness on the magnitude and aging behavior of the transverse piezoelectric coefficient (d31) of PZT thin films

AU - Shepard, J. F.

AU - Chu, F.

AU - Moses, P. J.

AU - Trolier-McKinstry, Susan E.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from -60 to -90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31 coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.

AB - The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from -60 to -90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31 coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.

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