Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates

Dongjin Won, Xiaojun Weng, Zakaria Y. Al Balushi, Joan Marie Redwing

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In-situ stress measurements were used to monitor the growth of N-polar GaN films on vicinal C-face SiC substrates using a two-step temperature process. A reduction in compressive stress in the N-polar GaN and a corresponding decrease in surface roughness were observed as the initial growth temperature was reduced from 1000 °C to 900 °C. The results suggest that compressive stress in N-polar GaN promotes step bunching and macroscale roughness in films grown on vicinal substrates. The reduction in compressive stress is proposed to originate from tensile thermal stress induced by the temperature change in the two-step process.

Original languageEnglish (US)
Article number241908
JournalApplied Physics Letters
Volume103
Issue number24
DOIs
StatePublished - Dec 9 2013

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stress measurement
bunching
thermal stresses
tensile stress
temperature
surface roughness
roughness

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{a58b839ec3d14636a78f9b9ff07d9566,
title = "Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates",
abstract = "In-situ stress measurements were used to monitor the growth of N-polar GaN films on vicinal C-face SiC substrates using a two-step temperature process. A reduction in compressive stress in the N-polar GaN and a corresponding decrease in surface roughness were observed as the initial growth temperature was reduced from 1000 °C to 900 °C. The results suggest that compressive stress in N-polar GaN promotes step bunching and macroscale roughness in films grown on vicinal substrates. The reduction in compressive stress is proposed to originate from tensile thermal stress induced by the temperature change in the two-step process.",
author = "Dongjin Won and Xiaojun Weng and {Al Balushi}, {Zakaria Y.} and Redwing, {Joan Marie}",
year = "2013",
month = "12",
day = "9",
doi = "10.1063/1.4845575",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates. / Won, Dongjin; Weng, Xiaojun; Al Balushi, Zakaria Y.; Redwing, Joan Marie.

In: Applied Physics Letters, Vol. 103, No. 24, 241908, 09.12.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates

AU - Won, Dongjin

AU - Weng, Xiaojun

AU - Al Balushi, Zakaria Y.

AU - Redwing, Joan Marie

PY - 2013/12/9

Y1 - 2013/12/9

N2 - In-situ stress measurements were used to monitor the growth of N-polar GaN films on vicinal C-face SiC substrates using a two-step temperature process. A reduction in compressive stress in the N-polar GaN and a corresponding decrease in surface roughness were observed as the initial growth temperature was reduced from 1000 °C to 900 °C. The results suggest that compressive stress in N-polar GaN promotes step bunching and macroscale roughness in films grown on vicinal substrates. The reduction in compressive stress is proposed to originate from tensile thermal stress induced by the temperature change in the two-step process.

AB - In-situ stress measurements were used to monitor the growth of N-polar GaN films on vicinal C-face SiC substrates using a two-step temperature process. A reduction in compressive stress in the N-polar GaN and a corresponding decrease in surface roughness were observed as the initial growth temperature was reduced from 1000 °C to 900 °C. The results suggest that compressive stress in N-polar GaN promotes step bunching and macroscale roughness in films grown on vicinal substrates. The reduction in compressive stress is proposed to originate from tensile thermal stress induced by the temperature change in the two-step process.

UR - http://www.scopus.com/inward/record.url?scp=84890503110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890503110&partnerID=8YFLogxK

U2 - 10.1063/1.4845575

DO - 10.1063/1.4845575

M3 - Article

AN - SCOPUS:84890503110

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 241908

ER -