Influence of impurities on mechanisms of growth in MOVPE GaAs

S. Nayak, Joan Marie Redwing, J. W. Huang, M. G. Lagally, T. F. Kuech

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Atomic force microscopy (AFM) has been used to investigate the atomic-scale mechanisms of growth of GaAs by metal organic vapor phase epitaxy (MOVPE). The influence of impurities such as silicon, oxygen and carbon on the small-scale periodic structure as well as on the large-scale features has been studied. The growth front of GaAs epitaxial films grown on vicinal GaAs (100) substrates exhibits periodic structure except for the Si doped GaAs grown on semi-insulating vicinal GaAs (100) substrates. The periodicity on the surface breaks down when oxygen, silicon or carbon concentration exceeds 1018cm-3. These impurities may preferentially attach at the step edges resulting in reduction of the mobility of the steps. At higher impurity concentrations, the motion of the growth front gets pinned on the surface resulting in a disruption of the step flow mode of growth. The wide terraces on Si doped GaAs grown on semi-insulating substrate is proposed as the kinetic limited step bunching during the step flow mode of growth.

Original languageEnglish (US)
Pages (from-to)293-298
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume367
StatePublished - Jan 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994

Fingerprint

Vapor phase epitaxy
vapor phase epitaxy
Metals
Impurities
impurities
metals
Periodic structures
Silicon
Substrates
Carbon
Oxygen
carbon
bunching
Epitaxial films
silicon
oxygen
periodic variations
Atomic force microscopy
breakdown
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nayak, S. ; Redwing, Joan Marie ; Huang, J. W. ; Lagally, M. G. ; Kuech, T. F. / Influence of impurities on mechanisms of growth in MOVPE GaAs. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 367. pp. 293-298.
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Influence of impurities on mechanisms of growth in MOVPE GaAs. / Nayak, S.; Redwing, Joan Marie; Huang, J. W.; Lagally, M. G.; Kuech, T. F.

In: Materials Research Society Symposium - Proceedings, Vol. 367, 01.01.1995, p. 293-298.

Research output: Contribution to journalConference article

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T1 - Influence of impurities on mechanisms of growth in MOVPE GaAs

AU - Nayak, S.

AU - Redwing, Joan Marie

AU - Huang, J. W.

AU - Lagally, M. G.

AU - Kuech, T. F.

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AB - Atomic force microscopy (AFM) has been used to investigate the atomic-scale mechanisms of growth of GaAs by metal organic vapor phase epitaxy (MOVPE). The influence of impurities such as silicon, oxygen and carbon on the small-scale periodic structure as well as on the large-scale features has been studied. The growth front of GaAs epitaxial films grown on vicinal GaAs (100) substrates exhibits periodic structure except for the Si doped GaAs grown on semi-insulating vicinal GaAs (100) substrates. The periodicity on the surface breaks down when oxygen, silicon or carbon concentration exceeds 1018cm-3. These impurities may preferentially attach at the step edges resulting in reduction of the mobility of the steps. At higher impurity concentrations, the motion of the growth front gets pinned on the surface resulting in a disruption of the step flow mode of growth. The wide terraces on Si doped GaAs grown on semi-insulating substrate is proposed as the kinetic limited step bunching during the step flow mode of growth.

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