Influence of interfacial dislocations on hysteresis loops of ferroelectric films

Y. L. Li, S. Y. Hu, S. Choudhury, M. I. Baskes, A. Saxena, T. Lookman, Q. X. Jia, D. G. Schlom, Long-qing Chen

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.

Original languageEnglish (US)
Article number104110
JournalJournal of Applied Physics
Volume104
Issue number10
DOIs
StatePublished - Dec 8 2008

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hysteresis
polarization
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Li, Y. L., Hu, S. Y., Choudhury, S., Baskes, M. I., Saxena, A., Lookman, T., ... Chen, L. (2008). Influence of interfacial dislocations on hysteresis loops of ferroelectric films. Journal of Applied Physics, 104(10), [104110]. https://doi.org/10.1063/1.3021354
Li, Y. L. ; Hu, S. Y. ; Choudhury, S. ; Baskes, M. I. ; Saxena, A. ; Lookman, T. ; Jia, Q. X. ; Schlom, D. G. ; Chen, Long-qing. / Influence of interfacial dislocations on hysteresis loops of ferroelectric films. In: Journal of Applied Physics. 2008 ; Vol. 104, No. 10.
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Li, YL, Hu, SY, Choudhury, S, Baskes, MI, Saxena, A, Lookman, T, Jia, QX, Schlom, DG & Chen, L 2008, 'Influence of interfacial dislocations on hysteresis loops of ferroelectric films', Journal of Applied Physics, vol. 104, no. 10, 104110. https://doi.org/10.1063/1.3021354

Influence of interfacial dislocations on hysteresis loops of ferroelectric films. / Li, Y. L.; Hu, S. Y.; Choudhury, S.; Baskes, M. I.; Saxena, A.; Lookman, T.; Jia, Q. X.; Schlom, D. G.; Chen, Long-qing.

In: Journal of Applied Physics, Vol. 104, No. 10, 104110, 08.12.2008.

Research output: Contribution to journalArticle

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AU - Li, Y. L.

AU - Hu, S. Y.

AU - Choudhury, S.

AU - Baskes, M. I.

AU - Saxena, A.

AU - Lookman, T.

AU - Jia, Q. X.

AU - Schlom, D. G.

AU - Chen, Long-qing

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AB - We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.

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Li YL, Hu SY, Choudhury S, Baskes MI, Saxena A, Lookman T et al. Influence of interfacial dislocations on hysteresis loops of ferroelectric films. Journal of Applied Physics. 2008 Dec 8;104(10). 104110. https://doi.org/10.1063/1.3021354