Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

Zhou Jing, Lü Tian-Quan, Xie Wen-Guang, Wenwu Cao

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Original languageEnglish (US)
Pages (from-to)3054-3060
Number of pages7
JournalChinese Physics B
Volume18
Issue number7
DOIs
StatePublished - Aug 25 2009

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this