Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

Zhou Jing, Lü Tian-Quan, Xie Wen-Guang, Wenwu Cao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Original languageEnglish (US)
Pages (from-to)3054-3060
Number of pages7
JournalChinese Physics B
Volume18
Issue number7
DOIs
StatePublished - Aug 25 2009

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dielectric properties
thin films
magnetic permeability
Ising model
approximation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{2b158ff0f8b64737b8b73998516b926f,
title = "Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones",
abstract = "By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.",
author = "Zhou Jing and L{\"u} Tian-Quan and Xie Wen-Guang and Wenwu Cao",
year = "2009",
month = "8",
day = "25",
doi = "10.1088/1674-1056/18/7/074",
language = "English (US)",
volume = "18",
pages = "3054--3060",
journal = "Chinese Physics B",
issn = "1674-1056",
publisher = "IOP Publishing Ltd.",
number = "7",

}

Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones. / Jing, Zhou; Tian-Quan, Lü; Wen-Guang, Xie; Cao, Wenwu.

In: Chinese Physics B, Vol. 18, No. 7, 25.08.2009, p. 3054-3060.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

AU - Jing, Zhou

AU - Tian-Quan, Lü

AU - Wen-Guang, Xie

AU - Cao, Wenwu

PY - 2009/8/25

Y1 - 2009/8/25

N2 - By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

AB - By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

UR - http://www.scopus.com/inward/record.url?scp=68949178213&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68949178213&partnerID=8YFLogxK

U2 - 10.1088/1674-1056/18/7/074

DO - 10.1088/1674-1056/18/7/074

M3 - Article

AN - SCOPUS:68949178213

VL - 18

SP - 3054

EP - 3060

JO - Chinese Physics B

JF - Chinese Physics B

SN - 1674-1056

IS - 7

ER -