Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering