Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

Wanlin Zhu, Ichiro Fujii, Wei Ren, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

Original languageEnglish (US)
Pages (from-to)7883-7889
Number of pages7
JournalJournal of Materials Science
Volume49
Issue number22
DOIs
StatePublished - Jan 1 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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