TY - JOUR
T1 - Influence of low-energy atomic hydrogen on argon-implanted silicon schottky barriers
AU - Ashok, S.
AU - Giewont, K.
PY - 1985/7
Y1 - 1985/7
N2 - Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.
AB - Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.
UR - http://www.scopus.com/inward/record.url?scp=0022101248&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022101248&partnerID=8YFLogxK
U2 - 10.1143/JJAP.24.L533
DO - 10.1143/JJAP.24.L533
M3 - Article
AN - SCOPUS:0022101248
VL - 24
SP - L533-L535
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 7
ER -