Influence of low-energy atomic hydrogen on argon-implanted silicon schottky barriers

S. Ashok, K. Giewont

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Abstract

Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.

Original languageEnglish (US)
Pages (from-to)L533-L535
JournalJapanese Journal of Applied Physics
Volume24
Issue number7
DOIs
StatePublished - Jul 1985

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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