Influence of low-energy atomic hydrogen on argon-implanted silicon schottky barriers

S. Ashok, K. Giewont

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.

Original languageEnglish (US)
Pages (from-to)L533-L535
JournalJapanese Journal of Applied Physics
Volume24
Issue number7
DOIs
StatePublished - Jul 1985

Fingerprint

nuclear energy
Nuclear energy
Argon
argon
Silicon
Hydrogen
silicon
hydrogen
Schottky diodes
Amorphous silicon
amorphous silicon
implantation
surface layers
Diodes
Doping (additives)
interactions
dosage
Ions
Metals
metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.",
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Influence of low-energy atomic hydrogen on argon-implanted silicon schottky barriers. / Ashok, S.; Giewont, K.

In: Japanese Journal of Applied Physics, Vol. 24, No. 7, 07.1985, p. L533-L535.

Research output: Contribution to journalArticle

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AU - Ashok, S.

AU - Giewont, K.

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AB - Low-energy (0.4 keV), high-dose (~ 1018 cm-2) H+ implantation into n-type and p-type Si previously implanted with Ar has resulted in unusual modification of the Si surface barrier. The complex interaction of these ions in Si has resulted in Al/p-Si Schottky diodes with an effective barrier height of 0.83 eV, the highest reported value for any metal/p-Si contact. The corresponding complementary influence of atomic hydrogen on n-Si is not seen, suggesting specific interactions between H and the dopant or the formation of a surface layer of hydrogenated amorphous silicon.

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