Mn-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of acceptor dopant concentration on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films between ∼0.5-2 μm in thickness doped with 1-2mol.% Mn, the low field relative permittivity remained between 900 and 1000. With increasing Mn concentration, a threshold field developed in the ac field dependence of the relative permittivity. Furthermore, both the reversible and irreversible Rayleigh constants decreased. These observations are consistent with the possibility that Mn′Ti - VÖ (or Mn″Ti - V Ö ) defect dipoles act as strong pinning centers.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)