Influence of Mn doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

Wanlin Zhu, Ichiro Fujii, Wei Ren, Susan Trolier-Mckinstry

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Mn-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of acceptor dopant concentration on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films between ∼0.5-2 μm in thickness doped with 1-2mol.% Mn, the low field relative permittivity remained between 900 and 1000. With increasing Mn concentration, a threshold field developed in the ac field dependence of the relative permittivity. Furthermore, both the reversible and irreversible Rayleigh constants decreased. These observations are consistent with the possibility that Mn′Ti - VÖ (or Mn″Ti - V Ö ) defect dipoles act as strong pinning centers.

Original languageEnglish (US)
Article number064105
JournalJournal of Applied Physics
Volume109
Issue number6
DOIs
StatePublished - Mar 15 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Influence of Mn doping on domain wall motion in Pb(Zr<sub>0.52</sub>Ti <sub>0.48</sub>)O<sub>3</sub> films'. Together they form a unique fingerprint.

Cite this