The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.
|Original language||English (US)|
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - Sep 1 2011|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics