Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

S. O. Gordienko, A. N. Nazarov, A. V. Rusavsky, A. V. Vasin, Yu V. Gomeniuk, V. S. Lysenko, V. V. Strelchuk, A. S. Nikolaenko, S. Ashok

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

Original languageEnglish (US)
Pages (from-to)2749-2751
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number9
DOIs
StatePublished - Sep 1 2011

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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