Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

S. O. Gordienko, A. N. Nazarov, A. V. Rusavsky, A. V. Vasin, Yu V. Gomeniuk, V. S. Lysenko, V. V. Strelchuk, A. S. Nikolaenko, S Ashok

Research output: Contribution to journalArticle

Abstract

The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

Original languageEnglish (US)
Pages (from-to)2749-2751
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number9
DOIs
StatePublished - Sep 1 2011

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electrical properties
photoluminescence
oxidation
leakage
thin films
chemical properties
temperature
magnetron sputtering
chemical composition
sputtering
inclusions
carbon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Gordienko, S. O. ; Nazarov, A. N. ; Rusavsky, A. V. ; Vasin, A. V. ; Gomeniuk, Yu V. ; Lysenko, V. S. ; Strelchuk, V. V. ; Nikolaenko, A. S. ; Ashok, S. / Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 9. pp. 2749-2751.
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abstract = "The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.",
author = "Gordienko, {S. O.} and Nazarov, {A. N.} and Rusavsky, {A. V.} and Vasin, {A. V.} and Gomeniuk, {Yu V.} and Lysenko, {V. S.} and Strelchuk, {V. V.} and Nikolaenko, {A. S.} and S Ashok",
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Gordienko, SO, Nazarov, AN, Rusavsky, AV, Vasin, AV, Gomeniuk, YV, Lysenko, VS, Strelchuk, VV, Nikolaenko, AS & Ashok, S 2011, 'Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 9, pp. 2749-2751. https://doi.org/10.1002/pssc.201084065

Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb. / Gordienko, S. O.; Nazarov, A. N.; Rusavsky, A. V.; Vasin, A. V.; Gomeniuk, Yu V.; Lysenko, V. S.; Strelchuk, V. V.; Nikolaenko, A. S.; Ashok, S.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 9, 01.09.2011, p. 2749-2751.

Research output: Contribution to journalArticle

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AU - Gordienko, S. O.

AU - Nazarov, A. N.

AU - Rusavsky, A. V.

AU - Vasin, A. V.

AU - Gomeniuk, Yu V.

AU - Lysenko, V. S.

AU - Strelchuk, V. V.

AU - Nikolaenko, A. S.

AU - Ashok, S

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AB - The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si1-xCx:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 °C-500 °C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage.

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