Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

S. Nayak; J. W. Huang; J. M. Redwing; D. E. Savage; M. G. Lagally; T. F. Kuech

doi:10.1063/1.115949

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

S. Nayak, J. W. Huang, J. M. Redwing, D. E. Savage, M. G. Lagally, T. F. Kuech

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9 Scopus citations

Abstract

Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

Original language	English (US)
Pages (from-to)	1270-1272
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	9
DOIs	https://doi.org/10.1063/1.115949
State	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115949

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abstract = "Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.",

author = "S. Nayak and Huang, {J. W.} and Redwing, {J. M.} and Savage, {D. E.} and Lagally, {M. G.} and Kuech, {T. F.}",

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T1 - Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

AU - Nayak, S.

AU - Huang, J. W.

AU - Redwing, J. M.

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Kuech, T. F.

PY - 1996

Y1 - 1996

N2 - Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

AB - Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

Abstract

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