Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

S. Nayak, J. W. Huang, Joan Marie Redwing, D. E. Savage, M. G. Lagally, T. F. Kuech

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

Original languageEnglish (US)
Pages (from-to)1270-1272
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number9
DOIs
StatePublished - Dec 1 1996

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vapor phase epitaxy
oxygen
periodic variations
surface roughness
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nayak, S. ; Huang, J. W. ; Redwing, Joan Marie ; Savage, D. E. ; Lagally, M. G. ; Kuech, T. F. / Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001). In: Applied Physics Letters. 1996 ; Vol. 68, No. 9. pp. 1270-1272.
@article{de9de72a27f045ca84f8bf1407e25182,
title = "Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)",
abstract = "Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.",
author = "S. Nayak and Huang, {J. W.} and Redwing, {Joan Marie} and Savage, {D. E.} and Lagally, {M. G.} and Kuech, {T. F.}",
year = "1996",
month = "12",
day = "1",
doi = "10.1063/1.115949",
language = "English (US)",
volume = "68",
pages = "1270--1272",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001). / Nayak, S.; Huang, J. W.; Redwing, Joan Marie; Savage, D. E.; Lagally, M. G.; Kuech, T. F.

In: Applied Physics Letters, Vol. 68, No. 9, 01.12.1996, p. 1270-1272.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

AU - Nayak, S.

AU - Huang, J. W.

AU - Redwing, Joan Marie

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Kuech, T. F.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

AB - Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm-3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness.

UR - http://www.scopus.com/inward/record.url?scp=0343417341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343417341&partnerID=8YFLogxK

U2 - 10.1063/1.115949

DO - 10.1063/1.115949

M3 - Article

AN - SCOPUS:0343417341

VL - 68

SP - 1270

EP - 1272

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -