Influence of oxygen on the activation of p-type GaN

B. A. Hull, Suzanne E. Mohney, H. S. Venugopalan, J. C. Ramer

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

The presence of oxygen in the annealing environment can exhibit a strong influence on the activation of p-GaN, as demonstrated by experiments described in this letter. We activated p-GaN at 600-900 °C in four environments: ultrahigh purity (UHP) N2 gettered to remove residual O2, UHP N2 without gettering, 99.5% UHP N2/0.5% UHP O2, and 90% UHP N2/10% UHP O2. The resistivity of the p-GaN was lowest when O2 was intentionally introduced during activation and was highest when extra care was taken to getter residual O2 from the annealing gas. The experiments also demonstrate that unintentionally incorporated O2 can be at high enough levels to influence the activation process.

Original languageEnglish (US)
Pages (from-to)2271-2273
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number16
DOIs
StatePublished - Apr 17 2000

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purity
activation
oxygen
annealing
electrical resistivity
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hull, B. A. ; Mohney, Suzanne E. ; Venugopalan, H. S. ; Ramer, J. C. / Influence of oxygen on the activation of p-type GaN. In: Applied Physics Letters. 2000 ; Vol. 76, No. 16. pp. 2271-2273.
@article{78ddacac07c34675b92810671f02d6f3,
title = "Influence of oxygen on the activation of p-type GaN",
abstract = "The presence of oxygen in the annealing environment can exhibit a strong influence on the activation of p-GaN, as demonstrated by experiments described in this letter. We activated p-GaN at 600-900 °C in four environments: ultrahigh purity (UHP) N2 gettered to remove residual O2, UHP N2 without gettering, 99.5{\%} UHP N2/0.5{\%} UHP O2, and 90{\%} UHP N2/10{\%} UHP O2. The resistivity of the p-GaN was lowest when O2 was intentionally introduced during activation and was highest when extra care was taken to getter residual O2 from the annealing gas. The experiments also demonstrate that unintentionally incorporated O2 can be at high enough levels to influence the activation process.",
author = "Hull, {B. A.} and Mohney, {Suzanne E.} and Venugopalan, {H. S.} and Ramer, {J. C.}",
year = "2000",
month = "4",
day = "17",
doi = "10.1063/1.126318",
language = "English (US)",
volume = "76",
pages = "2271--2273",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Hull, BA, Mohney, SE, Venugopalan, HS & Ramer, JC 2000, 'Influence of oxygen on the activation of p-type GaN', Applied Physics Letters, vol. 76, no. 16, pp. 2271-2273. https://doi.org/10.1063/1.126318

Influence of oxygen on the activation of p-type GaN. / Hull, B. A.; Mohney, Suzanne E.; Venugopalan, H. S.; Ramer, J. C.

In: Applied Physics Letters, Vol. 76, No. 16, 17.04.2000, p. 2271-2273.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of oxygen on the activation of p-type GaN

AU - Hull, B. A.

AU - Mohney, Suzanne E.

AU - Venugopalan, H. S.

AU - Ramer, J. C.

PY - 2000/4/17

Y1 - 2000/4/17

N2 - The presence of oxygen in the annealing environment can exhibit a strong influence on the activation of p-GaN, as demonstrated by experiments described in this letter. We activated p-GaN at 600-900 °C in four environments: ultrahigh purity (UHP) N2 gettered to remove residual O2, UHP N2 without gettering, 99.5% UHP N2/0.5% UHP O2, and 90% UHP N2/10% UHP O2. The resistivity of the p-GaN was lowest when O2 was intentionally introduced during activation and was highest when extra care was taken to getter residual O2 from the annealing gas. The experiments also demonstrate that unintentionally incorporated O2 can be at high enough levels to influence the activation process.

AB - The presence of oxygen in the annealing environment can exhibit a strong influence on the activation of p-GaN, as demonstrated by experiments described in this letter. We activated p-GaN at 600-900 °C in four environments: ultrahigh purity (UHP) N2 gettered to remove residual O2, UHP N2 without gettering, 99.5% UHP N2/0.5% UHP O2, and 90% UHP N2/10% UHP O2. The resistivity of the p-GaN was lowest when O2 was intentionally introduced during activation and was highest when extra care was taken to getter residual O2 from the annealing gas. The experiments also demonstrate that unintentionally incorporated O2 can be at high enough levels to influence the activation process.

UR - http://www.scopus.com/inward/record.url?scp=0001597514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001597514&partnerID=8YFLogxK

U2 - 10.1063/1.126318

DO - 10.1063/1.126318

M3 - Article

VL - 76

SP - 2271

EP - 2273

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -