Influence of PbO content on the dielectric failure of Nb-doped {100}-oriented lead zirconate titanate films

Wanlin Zhu, Trent Borman, Kory DeCesaris, Bo Truong, Michelle M. Lieu, Song Won Ko, Peter Mardilovich, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

Abstract

A series of niobium-doped, {100} textured, “gradient free,” lead zirconate titanate (PNZT) films with different PbO contents were fabricated by the chemical solution deposition method. The films’ PbO content was controlled by changing the average PbO content in the solution from 114.7 to 117 at.%. During the dielectric breakdown process of 1.5 μm thick PNZT films with Pt top and bottom electrodes, two phenomena were observed: cracking and thermal breakdown of the piezoelectric film. At 150°C, with an applied 400 kV/cm electric field, the crack density of PNZT films induced by electromechanical failure increased from 0.060/μm to 0.090/μm as the solution's PbO content increased from 114.7% to 117%. In addition, the films showed higher crack densities and more frequent thermal breakdown events when the electric field was oriented downward (from top to bottom electrode) compared with an upward oriented electric field (from bottom to top electrode). The films with higher PbO content had a lower breakdown strength. Also, all films showed lower breakdown strength when measured in the field down direction. The Schottky barrier height (SBH) decreased from 0.82 ± 0.06 to 0.68 ± 0.04 eV in the field up direction measurement as the PbO content increased. The SBH value did not show significant change in the field down direction measurement. This suggests that the asymmetry in the film/electrode interfaces is a function of the PbO content in the original solution.

Original languageEnglish (US)
Pages (from-to)1734-1740
Number of pages7
JournalJournal of the American Ceramic Society
Volume102
Issue number4
DOIs
StatePublished - Apr 1 2019

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Electrodes
Electric fields
Niobium
Cracks
lead titanate zirconate
Electric breakdown
Thick films
Direction compound
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Zhu, Wanlin ; Borman, Trent ; DeCesaris, Kory ; Truong, Bo ; Lieu, Michelle M. ; Ko, Song Won ; Mardilovich, Peter ; Trolier-McKinstry, Susan E. / Influence of PbO content on the dielectric failure of Nb-doped {100}-oriented lead zirconate titanate films. In: Journal of the American Ceramic Society. 2019 ; Vol. 102, No. 4. pp. 1734-1740.
@article{8cb9e81de3ab4053ba282dd61a84e2eb,
title = "Influence of PbO content on the dielectric failure of Nb-doped {100}-oriented lead zirconate titanate films",
abstract = "A series of niobium-doped, {100} textured, “gradient free,” lead zirconate titanate (PNZT) films with different PbO contents were fabricated by the chemical solution deposition method. The films’ PbO content was controlled by changing the average PbO content in the solution from 114.7 to 117 at.{\%}. During the dielectric breakdown process of 1.5 μm thick PNZT films with Pt top and bottom electrodes, two phenomena were observed: cracking and thermal breakdown of the piezoelectric film. At 150°C, with an applied 400 kV/cm electric field, the crack density of PNZT films induced by electromechanical failure increased from 0.060/μm to 0.090/μm as the solution's PbO content increased from 114.7{\%} to 117{\%}. In addition, the films showed higher crack densities and more frequent thermal breakdown events when the electric field was oriented downward (from top to bottom electrode) compared with an upward oriented electric field (from bottom to top electrode). The films with higher PbO content had a lower breakdown strength. Also, all films showed lower breakdown strength when measured in the field down direction. The Schottky barrier height (SBH) decreased from 0.82 ± 0.06 to 0.68 ± 0.04 eV in the field up direction measurement as the PbO content increased. The SBH value did not show significant change in the field down direction measurement. This suggests that the asymmetry in the film/electrode interfaces is a function of the PbO content in the original solution.",
author = "Wanlin Zhu and Trent Borman and Kory DeCesaris and Bo Truong and Lieu, {Michelle M.} and Ko, {Song Won} and Peter Mardilovich and Trolier-McKinstry, {Susan E.}",
year = "2019",
month = "4",
day = "1",
doi = "10.1111/jace.16000",
language = "English (US)",
volume = "102",
pages = "1734--1740",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "4",

}

Influence of PbO content on the dielectric failure of Nb-doped {100}-oriented lead zirconate titanate films. / Zhu, Wanlin; Borman, Trent; DeCesaris, Kory; Truong, Bo; Lieu, Michelle M.; Ko, Song Won; Mardilovich, Peter; Trolier-McKinstry, Susan E.

In: Journal of the American Ceramic Society, Vol. 102, No. 4, 01.04.2019, p. 1734-1740.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of PbO content on the dielectric failure of Nb-doped {100}-oriented lead zirconate titanate films

AU - Zhu, Wanlin

AU - Borman, Trent

AU - DeCesaris, Kory

AU - Truong, Bo

AU - Lieu, Michelle M.

AU - Ko, Song Won

AU - Mardilovich, Peter

AU - Trolier-McKinstry, Susan E.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - A series of niobium-doped, {100} textured, “gradient free,” lead zirconate titanate (PNZT) films with different PbO contents were fabricated by the chemical solution deposition method. The films’ PbO content was controlled by changing the average PbO content in the solution from 114.7 to 117 at.%. During the dielectric breakdown process of 1.5 μm thick PNZT films with Pt top and bottom electrodes, two phenomena were observed: cracking and thermal breakdown of the piezoelectric film. At 150°C, with an applied 400 kV/cm electric field, the crack density of PNZT films induced by electromechanical failure increased from 0.060/μm to 0.090/μm as the solution's PbO content increased from 114.7% to 117%. In addition, the films showed higher crack densities and more frequent thermal breakdown events when the electric field was oriented downward (from top to bottom electrode) compared with an upward oriented electric field (from bottom to top electrode). The films with higher PbO content had a lower breakdown strength. Also, all films showed lower breakdown strength when measured in the field down direction. The Schottky barrier height (SBH) decreased from 0.82 ± 0.06 to 0.68 ± 0.04 eV in the field up direction measurement as the PbO content increased. The SBH value did not show significant change in the field down direction measurement. This suggests that the asymmetry in the film/electrode interfaces is a function of the PbO content in the original solution.

AB - A series of niobium-doped, {100} textured, “gradient free,” lead zirconate titanate (PNZT) films with different PbO contents were fabricated by the chemical solution deposition method. The films’ PbO content was controlled by changing the average PbO content in the solution from 114.7 to 117 at.%. During the dielectric breakdown process of 1.5 μm thick PNZT films with Pt top and bottom electrodes, two phenomena were observed: cracking and thermal breakdown of the piezoelectric film. At 150°C, with an applied 400 kV/cm electric field, the crack density of PNZT films induced by electromechanical failure increased from 0.060/μm to 0.090/μm as the solution's PbO content increased from 114.7% to 117%. In addition, the films showed higher crack densities and more frequent thermal breakdown events when the electric field was oriented downward (from top to bottom electrode) compared with an upward oriented electric field (from bottom to top electrode). The films with higher PbO content had a lower breakdown strength. Also, all films showed lower breakdown strength when measured in the field down direction. The Schottky barrier height (SBH) decreased from 0.82 ± 0.06 to 0.68 ± 0.04 eV in the field up direction measurement as the PbO content increased. The SBH value did not show significant change in the field down direction measurement. This suggests that the asymmetry in the film/electrode interfaces is a function of the PbO content in the original solution.

UR - http://www.scopus.com/inward/record.url?scp=85052931847&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052931847&partnerID=8YFLogxK

U2 - 10.1111/jace.16000

DO - 10.1111/jace.16000

M3 - Article

AN - SCOPUS:85052931847

VL - 102

SP - 1734

EP - 1740

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 4

ER -