Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties

Seung Hyun Kim, D. J. Kim, J. P. Maria, A. I. Kingon, S. K. Streiffer, J. Im, O. Auciello, A. R. Krauss

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Abstract

The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties.

Original languageEnglish (US)
Pages (from-to)496-498
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number4
DOIs
StatePublished - Jan 24 2000

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, S. H., Kim, D. J., Maria, J. P., Kingon, A. I., Streiffer, S. K., Im, J., Auciello, O., & Krauss, A. R. (2000). Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties. Applied Physics Letters, 76(4), 496-498. https://doi.org/10.1063/1.125799