Influence of strain on thermal conductivity of silicon nitride thin films

M. T. Alam, M. P. Manoharan, Md Amanul Haque, C. Muratore, A. Voevodin

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si 3N 4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K) 1at zero strain to 0.34 W (m K) 1at about 2.4% tensile strain. We propose that such strong strainthermal conductivity coupling is due to strain effects on fractionphonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.

Original languageEnglish (US)
Article number045001
JournalJournal of Micromechanics and Microengineering
Volume22
Issue number4
DOIs
StatePublished - Apr 1 2012

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Silicon nitride
Thermal conductivity
Amorphous silicon
Thin films
Ultrathin films
Tensile strain
Physics
Infrared radiation
silicon nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Alam, M. T. ; Manoharan, M. P. ; Haque, Md Amanul ; Muratore, C. ; Voevodin, A. / Influence of strain on thermal conductivity of silicon nitride thin films. In: Journal of Micromechanics and Microengineering. 2012 ; Vol. 22, No. 4.
@article{cfb736f2cd28427ca9c7d4ee15199ba3,
title = "Influence of strain on thermal conductivity of silicon nitride thin films",
abstract = "We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si 3N 4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K) 1at zero strain to 0.34 W (m K) 1at about 2.4{\%} tensile strain. We propose that such strong strainthermal conductivity coupling is due to strain effects on fractionphonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.",
author = "Alam, {M. T.} and Manoharan, {M. P.} and Haque, {Md Amanul} and C. Muratore and A. Voevodin",
year = "2012",
month = "4",
day = "1",
doi = "10.1088/0960-1317/22/4/045001",
language = "English (US)",
volume = "22",
journal = "Journal of Micromechanics and Microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
number = "4",

}

Influence of strain on thermal conductivity of silicon nitride thin films. / Alam, M. T.; Manoharan, M. P.; Haque, Md Amanul; Muratore, C.; Voevodin, A.

In: Journal of Micromechanics and Microengineering, Vol. 22, No. 4, 045001, 01.04.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of strain on thermal conductivity of silicon nitride thin films

AU - Alam, M. T.

AU - Manoharan, M. P.

AU - Haque, Md Amanul

AU - Muratore, C.

AU - Voevodin, A.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si 3N 4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K) 1at zero strain to 0.34 W (m K) 1at about 2.4% tensile strain. We propose that such strong strainthermal conductivity coupling is due to strain effects on fractionphonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.

AB - We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si 3N 4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K) 1at zero strain to 0.34 W (m K) 1at about 2.4% tensile strain. We propose that such strong strainthermal conductivity coupling is due to strain effects on fractionphonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.

UR - http://www.scopus.com/inward/record.url?scp=84858785461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858785461&partnerID=8YFLogxK

U2 - 10.1088/0960-1317/22/4/045001

DO - 10.1088/0960-1317/22/4/045001

M3 - Article

AN - SCOPUS:84858785461

VL - 22

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

SN - 0960-1317

IS - 4

M1 - 045001

ER -