Influence of substrate microstructure on the high field dielectric properties of BaTiO3 films

R. D. Levi, M. M. Samantaray, Susan E. Trolier-McKinstry, Clive A. Randall

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The temperature dependence of the electrical leakage current density of chemical solution deposited BaTiO3 films on high purity Ni foils was investigated as function of the underlying Ni microstructure. Depending on the Ni heat treatment prior to BaTiO3 deposition, it was found that pores in the dielectric followed the profiles of the underlying Ni grain boundary grooves. The electrical properties were then characterized on capacitors with and without the presence of Ni grain boundaries. When a Ni grain boundary from the substrate was present in the capacitor used during the electrical measurements, the loss tangent of the capacitor rose rapidly for dc biases exceeding ∼25 kV/cm. The critical bias increases to ∼100 kV/cm when no substrate grain boundaries are included in the capacitor. In addition, the capacitance-voltage curves are much more symmetric when grain boundaries are absent. This disparity in the electrical behavior was analyzed in terms of the mechanisms of charge conduction across the Ni-dielectric interface. While a reverse biased Schottky emission mechanism dominates the current in areas free of Ni grain boundaries, the barrier at the cathode is ineffective when Ni grain boundaries are present in the substrate. This, in turn, leads to a larger leakage current dominated by the forward biased Schottky barrier at the anode. The results are important to both embedded and surface mount capacitors.

Original languageEnglish (US)
Article number104117
JournalJournal of Applied Physics
Volume104
Issue number10
DOIs
StatePublished - Dec 8 2008

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dielectric properties
grain boundaries
microstructure
capacitors
leakage
tangents
grooves
electrical measurement
foils
purity
anodes
heat treatment
cathodes
capacitance
electrical properties
current density
porosity
conduction
temperature dependence
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The temperature dependence of the electrical leakage current density of chemical solution deposited BaTiO3 films on high purity Ni foils was investigated as function of the underlying Ni microstructure. Depending on the Ni heat treatment prior to BaTiO3 deposition, it was found that pores in the dielectric followed the profiles of the underlying Ni grain boundary grooves. The electrical properties were then characterized on capacitors with and without the presence of Ni grain boundaries. When a Ni grain boundary from the substrate was present in the capacitor used during the electrical measurements, the loss tangent of the capacitor rose rapidly for dc biases exceeding ∼25 kV/cm. The critical bias increases to ∼100 kV/cm when no substrate grain boundaries are included in the capacitor. In addition, the capacitance-voltage curves are much more symmetric when grain boundaries are absent. This disparity in the electrical behavior was analyzed in terms of the mechanisms of charge conduction across the Ni-dielectric interface. While a reverse biased Schottky emission mechanism dominates the current in areas free of Ni grain boundaries, the barrier at the cathode is ineffective when Ni grain boundaries are present in the substrate. This, in turn, leads to a larger leakage current dominated by the forward biased Schottky barrier at the anode. The results are important to both embedded and surface mount capacitors.",
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Influence of substrate microstructure on the high field dielectric properties of BaTiO3 films. / Levi, R. D.; Samantaray, M. M.; Trolier-McKinstry, Susan E.; Randall, Clive A.

In: Journal of Applied Physics, Vol. 104, No. 10, 104117, 08.12.2008.

Research output: Contribution to journalArticle

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