Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Susanne Stemmer

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Abstract

The growth and the electrical properties of HfO2 / In 0.53 Ga0.47 As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO2 from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO2 growth for (2×4) but not for the group-III-rich (4×2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.

Original languageEnglish (US)
Article number052911
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - Jan 31 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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