Influences on imprint failure of SrBi2Ta2O9 thin film capacitors

Dong Joo Kim, Seung Hyun Kim, Jon Paul Maria, Angus I. Kingon

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The imprint behavior of chemical solution deposited SrBi2Ta2O9(SBT) thin films has been investigated. The imprint properties were evaluated by hysteresis loop and pulse polarization measurements. Several parametric variables such as voltage, temperature, thickness and electrode stack structure were used to investigate possible imprint mechanisms. The domain configuration prior to imprinting appears to be an influential factor. If a film is not saturated, imprint rates are more rapid and the voltage shift is accompanied by polarization loss.

Original languageEnglish (US)
Pages (from-to)351-361
Number of pages11
JournalIntegrated Ferroelectrics
Volume25
Issue number1-4
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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