Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

David B.Saint John, Haoting Shen, Hang Beum Shin, Thomas Nelson Jackson, Nikolas J. Podraza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages3112-3117
Number of pages6
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Spectroscopic ellipsometry
Amorphous silicon
Infrared radiation
Thin films
Hydrogen
Parameterization
Silicon nitride
Germanium
Hydrogen bonds
Transistors
Titanium
Crystalline materials
Silicon
Substrates

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

John, D. B. S., Shen, H., Shin, H. B., Jackson, T. N., & Podraza, N. J. (2012). Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 3112-3117). [6318239] https://doi.org/10.1109/PVSC.2012.6318239
John, David B.Saint ; Shen, Haoting ; Shin, Hang Beum ; Jackson, Thomas Nelson ; Podraza, Nikolas J. / Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. pp. 3112-3117
@inproceedings{d2aed9bdc4fa43e8aa9344e7322c8237,
title = "Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry",
abstract = "Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.",
author = "John, {David B.Saint} and Haoting Shen and Shin, {Hang Beum} and Jackson, {Thomas Nelson} and Podraza, {Nikolas J.}",
year = "2012",
month = "11",
day = "26",
doi = "10.1109/PVSC.2012.6318239",
language = "English (US)",
isbn = "9781467300643",
pages = "3112--3117",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

}

John, DBS, Shen, H, Shin, HB, Jackson, TN & Podraza, NJ 2012, Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318239, pp. 3112-3117, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318239

Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. / John, David B.Saint; Shen, Haoting; Shin, Hang Beum; Jackson, Thomas Nelson; Podraza, Nikolas J.

Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 3112-3117 6318239.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry

AU - John, David B.Saint

AU - Shen, Haoting

AU - Shin, Hang Beum

AU - Jackson, Thomas Nelson

AU - Podraza, Nikolas J.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

AB - Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of ε = ε1 + iε2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates.

UR - http://www.scopus.com/inward/record.url?scp=84869398024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869398024&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6318239

DO - 10.1109/PVSC.2012.6318239

M3 - Conference contribution

SN - 9781467300643

SP - 3112

EP - 3117

BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

ER -

John DBS, Shen H, Shin HB, Jackson TN, Podraza NJ. Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 3112-3117. 6318239 https://doi.org/10.1109/PVSC.2012.6318239