Infrared probe of the insulator-to-metal transition in Ga 1-xMnxAs and Ga1-xBexAs

B. C. Chapler, R. C. Myers, S. MacK, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, D. N. Basov

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Abstract

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

Original languageEnglish (US)
Article number081203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number8
DOIs
StatePublished - Aug 26 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Chapler, B. C., Myers, R. C., MacK, S., Frenzel, A., Pursley, B. C., Burch, K. S., Singley, E. J., Dattelbaum, A. M., Samarth, N., Awschalom, D. D., & Basov, D. N. (2011). Infrared probe of the insulator-to-metal transition in Ga 1-xMnxAs and Ga1-xBexAs. Physical Review B - Condensed Matter and Materials Physics, 84(8), [081203]. https://doi.org/10.1103/PhysRevB.84.081203