InGaAs superconducting JFET's with Nb electrodes

A. W. Kleinsasser, Thomas Nelson Jackson, D. McInturff, G. D. Pettit, F. Rammo, J. M. Woodall

Research output: Contribution to journalArticle

Abstract

Summary form only given. The authors have fabricated InGaAs junction FETs with Nb source and drain electrodes with submicrometer spacings. The devices exhibit gate-controlled supercurrents as large as 8 mA/mm at 4.2 K. This value of controlled supercurrent is larger than any previously reported for superconducting field-effect devices. The channel material was n-type In0.53Ga0.47As, epitaxially grown by molecular beam epitaxy on InP substrates. Gate control was achieved using a p-n junction which was buried below the channel. This structure allowed the Nb superconductor to be deposited directly onto the freshly grown channel layer to insure a clean superconductor-semiconductor contact, which is essential for obtaining optimum superconducting properties. The superconducting electrodes were patterned by reactive ion etching.

Original languageEnglish (US)
Pages (from-to)2628
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11 pt 1
StatePublished - Nov 1989

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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    Kleinsasser, A. W., Jackson, T. N., McInturff, D., Pettit, G. D., Rammo, F., & Woodall, J. M. (1989). InGaAs superconducting JFET's with Nb electrodes. IEEE Transactions on Electron Devices, 36(11 pt 1), 2628.