InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates

K. S. Boutros, J. S. Flynn, V. Phanse, R. P. Vaudo, G. M. Smith, J. M. Redwing, T. R. Tolliver, N. G. Anderson

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1 Scopus citations


We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaN-on-sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In0.09Ga0.91N/GaN DH films had double-crystal XRD FWHM approximately 300 arcsec, and 400 nm peak PL emission with FWHM approximately 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

Original languageEnglish (US)
Pages (from-to)1047-1052
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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