InGaN/GaN double heterostructure laser with cleaved facets

D. Stocker, E. F. Schubert, W. Grieshaber, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, J. M. Redwing

Research output: Contribution to journalConference articlepeer-review

Abstract

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

Original languageEnglish (US)
Pages (from-to)122-127
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3284
DOIs
StatePublished - Dec 1 1998
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States
Duration: Jan 26 1998Jan 28 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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