InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.
|Original language||English (US)|
|Number of pages||9|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Dec 1 1998|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics