InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

G. M. Smith, K. S. Boutros, J. W. Szewczuk, J. S. Flynn, V. M. Phanse, R. P. Vaudo, Joan Marie Redwing

Research output: Contribution to journalConference article

Abstract

InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

Original languageEnglish (US)
Pages (from-to)8-16
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3279
DOIs
StatePublished - Dec 1 1998

Fingerprint

InGaN
Vapor phase epitaxy
Epitaxy
Heterostructures
Aluminum Oxide
Sapphire
Hydrides
vapor phase epitaxy
hydrides
Light emitting diodes
Heterojunctions
sapphire
light emitting diodes
Substrate
Diode
Substrates
Electroluminescence
homojunctions
Buffer layers
visible spectrum

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Smith, G. M. ; Boutros, K. S. ; Szewczuk, J. W. ; Flynn, J. S. ; Phanse, V. M. ; Vaudo, R. P. ; Redwing, Joan Marie. / InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates. In: Proceedings of SPIE - The International Society for Optical Engineering. 1998 ; Vol. 3279. pp. 8-16.
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title = "InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates",
abstract = "InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.",
author = "Smith, {G. M.} and Boutros, {K. S.} and Szewczuk, {J. W.} and Flynn, {J. S.} and Phanse, {V. M.} and Vaudo, {R. P.} and Redwing, {Joan Marie}",
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InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates. / Smith, G. M.; Boutros, K. S.; Szewczuk, J. W.; Flynn, J. S.; Phanse, V. M.; Vaudo, R. P.; Redwing, Joan Marie.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3279, 01.12.1998, p. 8-16.

Research output: Contribution to journalConference article

TY - JOUR

T1 - InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

AU - Smith, G. M.

AU - Boutros, K. S.

AU - Szewczuk, J. W.

AU - Flynn, J. S.

AU - Phanse, V. M.

AU - Vaudo, R. P.

AU - Redwing, Joan Marie

PY - 1998/12/1

Y1 - 1998/12/1

N2 - InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

AB - InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

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