TY - JOUR
T1 - Inherent stochasticity during insulator-metal transition in VO2
AU - Cheng, Shaobo
AU - Lee, Min Han
AU - Tran, Richard
AU - Shi, Yin
AU - Li, Xing
AU - Navarro, Henry
AU - Adda, Coline
AU - Meng, Qingping
AU - Chen, Long Qing
AU - Dynes, R. C.
AU - Ong, Shyue Ping
AU - Schuller, Ivan K.
AU - Zhu, Yimei
N1 - Funding Information:
ACKNOWLEDGMENTS. This work (synthesis, structural characterization, transport, theoretical calculations, and the collaboration between Brookhaven National Laboratory (BNL) and the University of California San Diego) was supported as part of Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award DE-SC0019273. Electron microscopy at BNL and the use of BNL’s Center for Functional Nanomaterials are supported by DOE-BES, the Division of Materials Science and Engineering, and Division of Science User Facility, respectively, under contract DE-SC0012704. R.T. and S.P.O. acknowledge computational resources provided by Triton Shared Computing Cluster at the University of California San Diego. The phase-field modeling was supported as part of the Computational Materials Sciences Program funded by the US DOE, Office of Sciences, BES, under award DE-SC0020145.
Publisher Copyright:
© 2021 National Academy of Sciences. All rights reserved.
PY - 2021/9/14
Y1 - 2021/9/14
N2 - Vanadium dioxide (V2), which exhibits a near-room-temperature insulator-metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile V2at local areas in planar V2/Ti2device configuration under external biasing. After each resistive switching, different V2monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of V2as the key material of neuromorphic computing.
AB - Vanadium dioxide (V2), which exhibits a near-room-temperature insulator-metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile V2at local areas in planar V2/Ti2device configuration under external biasing. After each resistive switching, different V2monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of V2as the key material of neuromorphic computing.
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U2 - 10.1073/pnas.2105895118
DO - 10.1073/pnas.2105895118
M3 - Article
C2 - 34493666
AN - SCOPUS:85114487402
VL - 118
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
SN - 0027-8424
IS - 37
M1 - e2105895118
ER -