Inhomogeneous laser heating and phonon confinement in silicon nanowires: A micro-Raman scattering study

Kofi W. Adu, H. R. Gutiérrez, U. J. Kim, P. C. Eklund

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

Results of a systematic set of micro-Raman experiments on the changes in the line shape of the ∼520 cm-1 one-phonon band in Si nanowires with laser flux Φ are presented. A complicated dependence of the 520 cm-1 Raman band asymmetry (A) with Φ is observed that depends both on the nanowire diameter and on the thermal anchoring of the wires to an indium foil substrate. With increasing power density in a ∼1 μ focal spot common to micro-Raman spectroscopy, we see a clear growth in A that has nothing to do with phonon confinement. In fact, we can explain the complex changes in A(Φ) by extending the model to include an inhomogeneous heating in the Raman volume. The effects we observe in Si nanowires should be common to all semiconducting nanostructures and underscores the importance of demonstrating a flux-independent line shape when studying pure phonon confinement effects by Raman scattering.

Original languageEnglish (US)
Article number155333
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number15
DOIs
StatePublished - May 10 2006

Fingerprint

Laser heating
laser heating
Silicon
Nanowires
Raman scattering
nanowires
Raman spectra
line shape
silicon
Fluxes
Indium
Metal foil
indium
Raman spectroscopy
radiant flux density
foils
Nanostructures
asymmetry
wire
Wire

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{0ae48baadb1c4928b9ceea79dd21635a,
title = "Inhomogeneous laser heating and phonon confinement in silicon nanowires: A micro-Raman scattering study",
abstract = "Results of a systematic set of micro-Raman experiments on the changes in the line shape of the ∼520 cm-1 one-phonon band in Si nanowires with laser flux Φ are presented. A complicated dependence of the 520 cm-1 Raman band asymmetry (A) with Φ is observed that depends both on the nanowire diameter and on the thermal anchoring of the wires to an indium foil substrate. With increasing power density in a ∼1 μ focal spot common to micro-Raman spectroscopy, we see a clear growth in A that has nothing to do with phonon confinement. In fact, we can explain the complex changes in A(Φ) by extending the model to include an inhomogeneous heating in the Raman volume. The effects we observe in Si nanowires should be common to all semiconducting nanostructures and underscores the importance of demonstrating a flux-independent line shape when studying pure phonon confinement effects by Raman scattering.",
author = "Adu, {Kofi W.} and Guti{\'e}rrez, {H. R.} and Kim, {U. J.} and Eklund, {P. C.}",
year = "2006",
month = "5",
day = "10",
doi = "10.1103/PhysRevB.73.155333",
language = "English (US)",
volume = "73",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "15",

}

Inhomogeneous laser heating and phonon confinement in silicon nanowires : A micro-Raman scattering study. / Adu, Kofi W.; Gutiérrez, H. R.; Kim, U. J.; Eklund, P. C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 73, No. 15, 155333, 10.05.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Inhomogeneous laser heating and phonon confinement in silicon nanowires

T2 - A micro-Raman scattering study

AU - Adu, Kofi W.

AU - Gutiérrez, H. R.

AU - Kim, U. J.

AU - Eklund, P. C.

PY - 2006/5/10

Y1 - 2006/5/10

N2 - Results of a systematic set of micro-Raman experiments on the changes in the line shape of the ∼520 cm-1 one-phonon band in Si nanowires with laser flux Φ are presented. A complicated dependence of the 520 cm-1 Raman band asymmetry (A) with Φ is observed that depends both on the nanowire diameter and on the thermal anchoring of the wires to an indium foil substrate. With increasing power density in a ∼1 μ focal spot common to micro-Raman spectroscopy, we see a clear growth in A that has nothing to do with phonon confinement. In fact, we can explain the complex changes in A(Φ) by extending the model to include an inhomogeneous heating in the Raman volume. The effects we observe in Si nanowires should be common to all semiconducting nanostructures and underscores the importance of demonstrating a flux-independent line shape when studying pure phonon confinement effects by Raman scattering.

AB - Results of a systematic set of micro-Raman experiments on the changes in the line shape of the ∼520 cm-1 one-phonon band in Si nanowires with laser flux Φ are presented. A complicated dependence of the 520 cm-1 Raman band asymmetry (A) with Φ is observed that depends both on the nanowire diameter and on the thermal anchoring of the wires to an indium foil substrate. With increasing power density in a ∼1 μ focal spot common to micro-Raman spectroscopy, we see a clear growth in A that has nothing to do with phonon confinement. In fact, we can explain the complex changes in A(Φ) by extending the model to include an inhomogeneous heating in the Raman volume. The effects we observe in Si nanowires should be common to all semiconducting nanostructures and underscores the importance of demonstrating a flux-independent line shape when studying pure phonon confinement effects by Raman scattering.

UR - http://www.scopus.com/inward/record.url?scp=33646271870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646271870&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.73.155333

DO - 10.1103/PhysRevB.73.155333

M3 - Article

AN - SCOPUS:33646271870

VL - 73

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

M1 - 155333

ER -