Insinhts on the DC characterization of ferroelectric field-effect-transistors

Matthew Jerry, Jeffrey A. Smith, Kai Ni, Atanu Saha, Sumeet Kumar Gupta, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-June
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Field effect transistors
Ferroelectric materials
Polarization
Hysteresis
Data storage equipment
Electric potential
Analytical models
Capacitance
Switches
Fabrication
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Jerry, M., Smith, J. A., Ni, K., Saha, A., Gupta, S. K., & Datta, S. (2018). Insinhts on the DC characterization of ferroelectric field-effect-transistors. In 2018 76th Device Research Conference, DRC 2018 (Vol. 2018-June). [8442191] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442191
Jerry, Matthew ; Smith, Jeffrey A. ; Ni, Kai ; Saha, Atanu ; Gupta, Sumeet Kumar ; Datta, Suman. / Insinhts on the DC characterization of ferroelectric field-effect-transistors. 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{4f51929142554859984466ccf0cdedb5,
title = "Insinhts on the DC characterization of ferroelectric field-effect-transistors",
abstract = "In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.",
author = "Matthew Jerry and Smith, {Jeffrey A.} and Kai Ni and Atanu Saha and Gupta, {Sumeet Kumar} and Suman Datta",
year = "2018",
month = "8",
day = "20",
doi = "10.1109/DRC.2018.8442191",
language = "English (US)",
isbn = "9781538630280",
volume = "2018-June",
booktitle = "2018 76th Device Research Conference, DRC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Jerry, M, Smith, JA, Ni, K, Saha, A, Gupta, SK & Datta, S 2018, Insinhts on the DC characterization of ferroelectric field-effect-transistors. in 2018 76th Device Research Conference, DRC 2018. vol. 2018-June, 8442191, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442191

Insinhts on the DC characterization of ferroelectric field-effect-transistors. / Jerry, Matthew; Smith, Jeffrey A.; Ni, Kai; Saha, Atanu; Gupta, Sumeet Kumar; Datta, Suman.

2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018. 8442191.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Insinhts on the DC characterization of ferroelectric field-effect-transistors

AU - Jerry, Matthew

AU - Smith, Jeffrey A.

AU - Ni, Kai

AU - Saha, Atanu

AU - Gupta, Sumeet Kumar

AU - Datta, Suman

PY - 2018/8/20

Y1 - 2018/8/20

N2 - In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.

AB - In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.

UR - http://www.scopus.com/inward/record.url?scp=85053202726&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053202726&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442191

DO - 10.1109/DRC.2018.8442191

M3 - Conference contribution

AN - SCOPUS:85053202726

SN - 9781538630280

VL - 2018-June

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Jerry M, Smith JA, Ni K, Saha A, Gupta SK, Datta S. Insinhts on the DC characterization of ferroelectric field-effect-transistors. In 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June. Institute of Electrical and Electronics Engineers Inc. 2018. 8442191 https://doi.org/10.1109/DRC.2018.8442191