TY - JOUR
T1 - Integer quantum Hall effect and enhanced g factor in quantum-confined Cd3As2 films
AU - Xiao, Run
AU - Zhang, Junyi
AU - Chamorro, Juan
AU - Kim, Jinwoong
AU - McQueen, Tyrel M.
AU - Vanderbilt, David
AU - Kayyalha, Morteza
AU - Li, Yi
AU - Samarth, Nitin
N1 - Funding Information:
This project was principally supported by the Institute for Quantum Matter under DOE EFRC Grant No. DE-SC0019331. We thank B. Ramshaw for valuable discussions.
Publisher Copyright:
© 2022 American Physical Society.
PY - 2022/11/15
Y1 - 2022/11/15
N2 - We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν=1) and at spin-degenerate higher index Landau levels with even filling factors (ν=2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at ν=3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.
AB - We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν=1) and at spin-degenerate higher index Landau levels with even filling factors (ν=2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at ν=3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.
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U2 - 10.1103/PhysRevB.106.L201101
DO - 10.1103/PhysRevB.106.L201101
M3 - Article
AN - SCOPUS:85141918249
SN - 2469-9950
VL - 106
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 20
M1 - L201101
ER -