Integrated a-Si

H/pentacene inorganic/organic complementary circuits

Mathias Bonse, Daniel B. Thomasson, Hagen Klauk, David J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

Original languageEnglish (US)
Pages (from-to)249-252
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1998

Fingerprint

transistors
Thin film transistors
Networks (circuits)
thin films
integrated circuits
logic
Integrated circuits
conservation
Conservation
Transistors
oscillators
Fabrication
fabrication
pentacene
rings
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Bonse, Mathias ; Thomasson, Daniel B. ; Klauk, Hagen ; Gundlach, David J. ; Jackson, Thomas Nelson. / Integrated a-Si : H/pentacene inorganic/organic complementary circuits. In: Technical Digest - International Electron Devices Meeting. 1998 ; pp. 249-252.
@article{b7776bb7d45d47fcac289af5b0e4a71b,
title = "Integrated a-Si: H/pentacene inorganic/organic complementary circuits",
abstract = "We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.",
author = "Mathias Bonse and Thomasson, {Daniel B.} and Hagen Klauk and Gundlach, {David J.} and Jackson, {Thomas Nelson}",
year = "1998",
language = "English (US)",
pages = "249--252",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Integrated a-Si : H/pentacene inorganic/organic complementary circuits. / Bonse, Mathias; Thomasson, Daniel B.; Klauk, Hagen; Gundlach, David J.; Jackson, Thomas Nelson.

In: Technical Digest - International Electron Devices Meeting, 1998, p. 249-252.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Integrated a-Si

T2 - H/pentacene inorganic/organic complementary circuits

AU - Bonse, Mathias

AU - Thomasson, Daniel B.

AU - Klauk, Hagen

AU - Gundlach, David J.

AU - Jackson, Thomas Nelson

PY - 1998

Y1 - 1998

N2 - We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

AB - We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

UR - http://www.scopus.com/inward/record.url?scp=0032257708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032257708&partnerID=8YFLogxK

M3 - Article

SP - 249

EP - 252

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -