Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Mathias Bonse, Daniel B. Thomasson, Hagen Klauk, David J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalConference articlepeer-review

37 Scopus citations

Abstract

We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

Original languageEnglish (US)
Pages (from-to)249-252
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 6 1998Dec 9 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Integrated a-Si:H/pentacene inorganic/organic complementary circuits'. Together they form a unique fingerprint.

Cite this