Integrated CAM-RAM Functionality using Ferroelectric FETs

Sumitha George, Nicolas Jao, Akshay Krishna Ramanathan, Xueqing Li, Sumeet Kumar Gupta, John Sampson, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Our work proposes a new Ferroelectric FET (FeFET) based Ternary Content Addressable Memory (TCAM) with features of integrated search and read operations (along with write), which we refer to as TCAM-RAM. The proposed memory exploits the unique features of the emerging FeFET technology, such as 3-Terminal device design, storage in the gate stack, etc., to achieve the proposed functionality. We also introduce Approximate CAM-RAM, which can quantize the bit vector similarity. All the proposed designs operate without negative voltages. We describe both NAND and NOR variants of CAM design. Our CAM design provides 31% area improvement over the previous FeFET 6T CAM design.

Original languageEnglish (US)
Title of host publicationProceedings of the 21st International Symposium on Quality Electronic Design, ISQED 2020
PublisherIEEE Computer Society
Pages81-86
Number of pages6
ISBN (Electronic)9781728142074
DOIs
StatePublished - Mar 2020
Event21st International Symposium on Quality Electronic Design, ISQED 2020 - Santa Clara, United States
Duration: Mar 25 2020Mar 26 2020

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2020-March
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference21st International Symposium on Quality Electronic Design, ISQED 2020
CountryUnited States
CitySanta Clara
Period3/25/203/26/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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