Integrated optical probing of the thermal dynamics of wide bandgap power electronics

James Spencer Lundh, Yiwen Song, Bikram Chatterjee, Albert G. Baca, Robert J. Kaplar, Andrew M. Armstrong, Andrew A. Allerman, Hyungtak Kim, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power (SWaP) of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current (DC) measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to sub-microsecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

Original languageEnglish (US)
Title of host publicationASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019
PublisherAmerican Society of Mechanical Engineers (ASME)
ISBN (Electronic)9780791859322
DOIs
StatePublished - Jan 1 2019
EventASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019 - Anaheim, United States
Duration: Oct 7 2019Oct 9 2019

Publication series

NameASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019

Conference

ConferenceASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019
CountryUnited States
CityAnaheim
Period10/7/1910/9/19

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Integrated optical probing of the thermal dynamics of wide bandgap power electronics'. Together they form a unique fingerprint.

  • Cite this

    Lundh, J. S., Song, Y., Chatterjee, B., Baca, A. G., Kaplar, R. J., Armstrong, A. M., Allerman, A. A., Kim, H., & Choi, S. (2019). Integrated optical probing of the thermal dynamics of wide bandgap power electronics. In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019 (ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019). American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/IPACK2019-6440