Integrated temperature mapping of lateral gallium nitride electronics

J. S. Lundh, B. Chatterjee, J. Dallas, H. Kim, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.

Original languageEnglish (US)
Title of host publicationProceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages320-327
Number of pages8
ISBN (Electronic)9781509029945
DOIs
StatePublished - Jul 25 2017
Event16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017 - Orlando, United States
Duration: May 30 2017Jun 2 2017

Other

Other16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
CountryUnited States
CityOrlando
Period5/30/176/2/17

Fingerprint

Gallium nitride
gallium nitrides
Electronic equipment
thermal mapping
supplements
electronics
temperature measurement
spatial resolution
selectivity
Temperature
temperature
Infrared imaging
Calibration
Hot Temperature
gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering

Cite this

Lundh, J. S., Chatterjee, B., Dallas, J., Kim, H., & Choi, S. (2017). Integrated temperature mapping of lateral gallium nitride electronics. In Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017 (pp. 320-327). [7992488] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITHERM.2017.7992488
Lundh, J. S. ; Chatterjee, B. ; Dallas, J. ; Kim, H. ; Choi, Sukwon. / Integrated temperature mapping of lateral gallium nitride electronics. Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 320-327
@inproceedings{ffedbbac613c4bb081d6f217b34dc055,
title = "Integrated temperature mapping of lateral gallium nitride electronics",
abstract = "For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.",
author = "Lundh, {J. S.} and B. Chatterjee and J. Dallas and H. Kim and Sukwon Choi",
year = "2017",
month = "7",
day = "25",
doi = "10.1109/ITHERM.2017.7992488",
language = "English (US)",
pages = "320--327",
booktitle = "Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Lundh, JS, Chatterjee, B, Dallas, J, Kim, H & Choi, S 2017, Integrated temperature mapping of lateral gallium nitride electronics. in Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017., 7992488, Institute of Electrical and Electronics Engineers Inc., pp. 320-327, 16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017, Orlando, United States, 5/30/17. https://doi.org/10.1109/ITHERM.2017.7992488

Integrated temperature mapping of lateral gallium nitride electronics. / Lundh, J. S.; Chatterjee, B.; Dallas, J.; Kim, H.; Choi, Sukwon.

Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 320-327 7992488.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Integrated temperature mapping of lateral gallium nitride electronics

AU - Lundh, J. S.

AU - Chatterjee, B.

AU - Dallas, J.

AU - Kim, H.

AU - Choi, Sukwon

PY - 2017/7/25

Y1 - 2017/7/25

N2 - For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.

AB - For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.

UR - http://www.scopus.com/inward/record.url?scp=85034419498&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034419498&partnerID=8YFLogxK

U2 - 10.1109/ITHERM.2017.7992488

DO - 10.1109/ITHERM.2017.7992488

M3 - Conference contribution

SP - 320

EP - 327

BT - Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lundh JS, Chatterjee B, Dallas J, Kim H, Choi S. Integrated temperature mapping of lateral gallium nitride electronics. In Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 320-327. 7992488 https://doi.org/10.1109/ITHERM.2017.7992488