Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

Michael S. Bresnehan, Matthew J. Hollander, Maxwell Wetherington, Michael Labella, Kathleen A. Trumbull, Randal Cavalero, David W. Snyder, Joshua Alexander Robinson

Research output: Contribution to journalArticle

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Abstract

Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale growth of h-BN on copper foil via a catalytic thermal CVD process and the subsequent transfer of h-BN to a 75 mm QFEG wafer. X-ray photoelectron spectroscopy (XPS) measurements confirm the absence of h-BN/graphitic domains and indicate that the film is chemically stable throughout the transfer process, while Raman spectroscopy indicates a 42% relaxation of compressive stress following removal of the copper substrate and subsequent transfer of h-BN to QFEG. Despite stress-induced wrinkling observed in the films, Hall effect measurements show little degradation (<10%) in carrier mobility for h-BN coated QFEG. Temperature dependent Hall measurements indicate little contribution from remote surface optical phonon scattering and suggest that, compared to HfO 2 based dielectrics, h-BN can be an excellent material for preserving electrical transport properties. Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO 2-based devices).

Original languageEnglish (US)
Pages (from-to)5234-5241
Number of pages8
JournalACS nano
Volume6
Issue number6
DOIs
StatePublished - Jun 26 2012

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Graphite
Boron nitride
boron nitrides
Graphene
graphene
wafers
Copper
Chemical vapor deposition
vapor deposition
wrinkling
copper
Gate dielectrics
Hall effect
Compressive stress
Metal foil
Raman spectroscopy
boron nitride
foils
X ray photoelectron spectroscopy
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Labella, M., Trumbull, K. A., Cavalero, R., ... Robinson, J. A. (2012). Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices. ACS nano, 6(6), 5234-5241. https://doi.org/10.1021/nn300996t
Bresnehan, Michael S. ; Hollander, Matthew J. ; Wetherington, Maxwell ; Labella, Michael ; Trumbull, Kathleen A. ; Cavalero, Randal ; Snyder, David W. ; Robinson, Joshua Alexander. / Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene : Toward wafer-scale, high-performance devices. In: ACS nano. 2012 ; Vol. 6, No. 6. pp. 5234-5241.
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Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene : Toward wafer-scale, high-performance devices. / Bresnehan, Michael S.; Hollander, Matthew J.; Wetherington, Maxwell; Labella, Michael; Trumbull, Kathleen A.; Cavalero, Randal; Snyder, David W.; Robinson, Joshua Alexander.

In: ACS nano, Vol. 6, No. 6, 26.06.2012, p. 5234-5241.

Research output: Contribution to journalArticle

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Bresnehan MS, Hollander MJ, Wetherington M, Labella M, Trumbull KA, Cavalero R et al. Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices. ACS nano. 2012 Jun 26;6(6):5234-5241. https://doi.org/10.1021/nn300996t