Intensity of exciton luminescence in silicon in a weak magnetic field

W. M. Chen, Osama O. Awadelkarim, H. Weman, B. Monemar

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Abstract

The effect of a weak magnetic field on the intensity of photoluminescence (PL) due to exciton recombination in silicon is investigated. A considerable decrease (as much as 1040 % for a rather low optical excitation level, <1 W/cm2) in the PL intensity with above-band-gap excitation is observed with increasing magnetic field (<0.25 T). The magnitude of this change depends on optical pumping level, excitation photon energy, orientation of the crystal with respect to the magnetic field, as well as the near-surface quality of the crystal. The mechanism responsible for this phenomenon is discussed and is attributed mainly to a strong enhancement of surface recombination due to magnetic-field-induced confinement of photoexcited free carriers near the surface.

Original languageEnglish (US)
Pages (from-to)5120-5125
Number of pages6
JournalPhysical Review B
Volume42
Issue number8
DOIs
StatePublished - Jan 1 1990

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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