Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces

S. Kar, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
PublisherPubl by Materials Research Society
Pages281-286
Number of pages6
ISBN (Print)1558991794
StatePublished - Dec 1 1993
EventProceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA
Duration: Dec 1 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume284
ISSN (Print)0272-9172

Other

OtherProceedings of a Symposium on Amorphous Insulating Thin Films
CityBoston, MA, USA
Period12/1/9212/4/92

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kar, S., & Ashok, S. (1993). Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. In J. Kanicki, W. L. Warren, R. A. B. Devine, & M. Matsumura (Eds.), Materials Research Society Symposium Proceedings (pp. 281-286). (Materials Research Society Symposium Proceedings; Vol. 284). Publ by Materials Research Society.