Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces

S. Kar, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
PublisherPubl by Materials Research Society
Pages281-286
Number of pages6
ISBN (Print)1558991794
StatePublished - Dec 1 1993
EventProceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA
Duration: Dec 1 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume284
ISSN (Print)0272-9172

Other

OtherProceedings of a Symposium on Amorphous Insulating Thin Films
CityBoston, MA, USA
Period12/1/9212/4/92

Fingerprint

Silicon oxides
Silicon
Ion bombardment
Oxides
Protons
bombardment
Hydrogen
Metals
traps
Defects
defects
silicon
hydrogen
hydrogen ions
electrical measurement
metal oxides
ions
interactions
oxides
Ions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kar, S., & Ashok, S. (1993). Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. In J. Kanicki, W. L. Warren, R. A. B. Devine, & M. Matsumura (Eds.), Materials Research Society Symposium Proceedings (pp. 281-286). (Materials Research Society Symposium Proceedings; Vol. 284). Publ by Materials Research Society.
Kar, S. ; Ashok, S. / Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. Materials Research Society Symposium Proceedings. editor / Jerzy Kanicki ; William L. Warren ; Roderick A.B. Devine ; Masakiyo Matsumura. Publ by Materials Research Society, 1993. pp. 281-286 (Materials Research Society Symposium Proceedings).
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Kar, S & Ashok, S 1993, Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. in J Kanicki, WL Warren, RAB Devine & M Matsumura (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 284, Publ by Materials Research Society, pp. 281-286, Proceedings of a Symposium on Amorphous Insulating Thin Films, Boston, MA, USA, 12/1/92.

Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. / Kar, S.; Ashok, S.

Materials Research Society Symposium Proceedings. ed. / Jerzy Kanicki; William L. Warren; Roderick A.B. Devine; Masakiyo Matsumura. Publ by Materials Research Society, 1993. p. 281-286 (Materials Research Society Symposium Proceedings; Vol. 284).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

AB - Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

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Kar S, Ashok S. Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces. In Kanicki J, Warren WL, Devine RAB, Matsumura M, editors, Materials Research Society Symposium Proceedings. Publ by Materials Research Society. 1993. p. 281-286. (Materials Research Society Symposium Proceedings).