Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides

Patrick M. Lenahan, W. L. Warren, D. T. Krick, P. V. Dressendorfer, Baylor B. Triplett

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Abstract

We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.

Original languageEnglish (US)
Pages (from-to)7612-7614
Number of pages3
JournalJournal of Applied Physics
Volume67
Issue number12
DOIs
StatePublished - Dec 1 1990

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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