Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides

Patrick M. Lenahan, W. L. Warren, D. T. Krick, P. V. Dressendorfer, Baylor B. Triplett

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.

Original languageEnglish (US)
Pages (from-to)7612-7614
Number of pages3
JournalJournal of Applied Physics
Volume67
Issue number12
DOIs
StatePublished - Dec 1 1990

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silicon oxides
metal oxides
hydrogen
metal oxide semiconductors
reaction products
reactivity
interactions
vacuum
irradiation
oxides
electric fields
gases
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lenahan, Patrick M. ; Warren, W. L. ; Krick, D. T. ; Dressendorfer, P. V. ; Triplett, Baylor B. / Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides. In: Journal of Applied Physics. 1990 ; Vol. 67, No. 12. pp. 7612-7614.
@article{ad9bdac3d79c4f1fb1352c89762264ce,
title = "Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides",
abstract = "We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.",
author = "Lenahan, {Patrick M.} and Warren, {W. L.} and Krick, {D. T.} and Dressendorfer, {P. V.} and Triplett, {Baylor B.}",
year = "1990",
month = "12",
day = "1",
doi = "10.1063/1.345830",
language = "English (US)",
volume = "67",
pages = "7612--7614",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides. / Lenahan, Patrick M.; Warren, W. L.; Krick, D. T.; Dressendorfer, P. V.; Triplett, Baylor B.

In: Journal of Applied Physics, Vol. 67, No. 12, 01.12.1990, p. 7612-7614.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides

AU - Lenahan, Patrick M.

AU - Warren, W. L.

AU - Krick, D. T.

AU - Dressendorfer, P. V.

AU - Triplett, Baylor B.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.

AB - We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.

UR - http://www.scopus.com/inward/record.url?scp=0012601519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012601519&partnerID=8YFLogxK

U2 - 10.1063/1.345830

DO - 10.1063/1.345830

M3 - Article

AN - SCOPUS:0012601519

VL - 67

SP - 7612

EP - 7614

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -