Interactions of sapphire surfaces with standard cleaning solutions

K. Kirby, K. Shanmugasundaram, V. Bojan, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In this study, the effects of selected standard surface cleaning processes on sapphire surfaces were investigated. Wet chemistries commonly used in Si cleaning including HPM, APM and dilute HF were studied along with alumina etching H3PO4. The cleaned substrates were characterized by means of wetting angle measurements, AFM, and XPS analyses. The preliminary results presented in this report indicate that all chemistries studied were altering morphology of sapphire surface. The HPM and APM mixtures were found to smoothen the surface while the effect of acidic etchants, HF and H 3PO4 was adverse and beneficial respectively. The XPS analysis indicated that within the range of elements monitored none of the above chemistries altered chemical composition of the sapphire surface in a meaningful manner.

Original languageEnglish (US)
Title of host publicationECS Transactions - 10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing
Pages343-349
Number of pages7
Edition2
DOIs
StatePublished - Dec 1 2007
Event10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number2
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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