Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study

Thomas Aichinger, Patrick M. Lenahan, Dethard Peters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We study the structure of SiC/SiO2 interface defects and the effects of negative bias temperature stress (NBTS) in lateral 4H silicon carbide (SiC) PMOSFETs. Our devices have 90 nm thick SiO2 gate oxides thermally grown in N2O ambient at 1280°C on n-type SiC. We investigate virgin (unstressed) and stressed devices using two different techniques: (i) for electrical characterization, we use the direct-current current-voltage (DCIV) technique [1] which measures a recombination current via interface defects and charge pumping (CP) which measures the number of interface defects within a certain range of the SiC band gap; (ii) to study the structure of the defects, we use electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) [2]. The elevated temperature during NBTS is provided by in-situ heated test structures. This is the first EDMR study of p-doped SiC MOSFETs and the first negative bias temperature instability (NBTI) study of SiC MOSFETs using in-situ (on-chip) heating during stress.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
Pages529-532
Number of pages4
DOIs
StatePublished - Feb 25 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: Sep 2 2012Sep 6 2012

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period9/2/129/6/12

Fingerprint

Silicon carbide
silicon carbides
Defects
defects
Magnetic resonance
temperature
magnetic resonance
field effect transistors
Temperature
Oxides
Negative bias temperature instability
silicon carbide
pumping
Energy gap
direct current
chips
Heating
heating
oxides
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Aichinger, T., Lenahan, P. M., & Peters, D. (2013). Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study. In Silicon Carbide and Related Materials 2012, ECSCRM 2012 (pp. 529-532). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.529
Aichinger, Thomas ; Lenahan, Patrick M. ; Peters, Dethard. / Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study. Silicon Carbide and Related Materials 2012, ECSCRM 2012. 2013. pp. 529-532 (Materials Science Forum).
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Aichinger, T, Lenahan, PM & Peters, D 2013, Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study. in Silicon Carbide and Related Materials 2012, ECSCRM 2012. Materials Science Forum, vol. 740-742, pp. 529-532, 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 9/2/12. https://doi.org/10.4028/www.scientific.net/MSF.740-742.529

Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study. / Aichinger, Thomas; Lenahan, Patrick M.; Peters, Dethard.

Silicon Carbide and Related Materials 2012, ECSCRM 2012. 2013. p. 529-532 (Materials Science Forum; Vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Aichinger T, Lenahan PM, Peters D. Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study. In Silicon Carbide and Related Materials 2012, ECSCRM 2012. 2013. p. 529-532. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.740-742.529