Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 25 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)