Interface defects in Si/HfO 2-based metal-oxide-semiconductor field-effect transistors

T. G. Pribicko, J. P. Campbell, P. M. Lenahan, W. Tsai, A. Kerber

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.

Original languageEnglish (US)
Article number173511
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number17
DOIs
StatePublished - Apr 25 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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