Abstract
Interface kinetics processes of ATMB crystal have been investigated in real time by using phase-contrast differential interferometric micrography with an automatic image-analysis system. The movement of straight steps on {1 0 1 2} faces have been studied. Experiment demonstrates that the mechanism of ATMB crystal growth is a typical model of multiple two-dimensional nucleation. During the crystal growth, there exist a critical supersaturation σ*≅3-4%. When σ* < σ < σ** = 16.5%, crystals grow by the consecutive deposition of layers. If σ** < σ < 18.50%, crystals grow by quasi-normal growth mechanism. The conditions of rapid growth of large ATMB crystal with good quality are presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 428-433 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 182 |
| Issue number | 3-4 |
| DOIs | |
| State | Published - Jan 1 1997 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Interface kinetics and crystal growth mechanism of a new organometallic coordination compound : Triallylthiourea mercury bromide. / Yu, X. L.; Sun, Y.; Hou, W. B.; Zhang, Shujun; Cheng, Zh X.
In: Journal of Crystal Growth, Vol. 182, No. 3-4, 01.01.1997, p. 428-433.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interface kinetics and crystal growth mechanism of a new organometallic coordination compound
T2 - Triallylthiourea mercury bromide
AU - Yu, X. L.
AU - Sun, Y.
AU - Hou, W. B.
AU - Zhang, Shujun
AU - Cheng, Zh X.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Interface kinetics processes of ATMB crystal have been investigated in real time by using phase-contrast differential interferometric micrography with an automatic image-analysis system. The movement of straight steps on {1 0 1 2} faces have been studied. Experiment demonstrates that the mechanism of ATMB crystal growth is a typical model of multiple two-dimensional nucleation. During the crystal growth, there exist a critical supersaturation σ*≅3-4%. When σ* < σ < σ** = 16.5%, crystals grow by the consecutive deposition of layers. If σ** < σ < 18.50%, crystals grow by quasi-normal growth mechanism. The conditions of rapid growth of large ATMB crystal with good quality are presented.
AB - Interface kinetics processes of ATMB crystal have been investigated in real time by using phase-contrast differential interferometric micrography with an automatic image-analysis system. The movement of straight steps on {1 0 1 2} faces have been studied. Experiment demonstrates that the mechanism of ATMB crystal growth is a typical model of multiple two-dimensional nucleation. During the crystal growth, there exist a critical supersaturation σ*≅3-4%. When σ* < σ < σ** = 16.5%, crystals grow by the consecutive deposition of layers. If σ** < σ < 18.50%, crystals grow by quasi-normal growth mechanism. The conditions of rapid growth of large ATMB crystal with good quality are presented.
UR - http://www.scopus.com/inward/record.url?scp=0031549955&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031549955&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(97)00342-4
DO - 10.1016/S0022-0248(97)00342-4
M3 - Article
AN - SCOPUS:0031549955
VL - 182
SP - 428
EP - 433
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -