Interface state density in Au-nGaAs Schottky diodes

J. M. Borrego, R. J. Gutmann, S. Ashok

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

A method for determining the surface state density in Schottky diodes taking into account both I-V and C-V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of surface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model was applied to extract interface state densities of Au-nGaAs guarded Schottky diodes fabricated from bulk and VPE (100) GaAs with carrier conentrations between 3 × 1015 and 8 × 1016 cm-3. These diodes exhibited ideality (n) factors of approximately 1.02 and room temperature saturation current densities ∼10-8 A/cm2. This model is in substantial agreement with forward bias measurements over the 77-360°K temperature range investigated, in that a temperature-independent energy distribution of interface states was obtained. In reverse bias the interface state model is most valid with the higher carrier concentration material and at high temperature and low bias voltage. Typical interface state densities from 0.07 eV above the zero bias Fermi level to 0.01 eV below the Fermi level were 2 × 1013 cm-2 eV-1. The validity of the model under reverse bias is restricted by a non-thermionic reverse current, thought to be enhance field emission from traps.

Original languageEnglish (US)
Pages (from-to)125-132
Number of pages8
JournalSolid State Electronics
Volume20
Issue number2
DOIs
StatePublished - Feb 1977

Fingerprint

Interface states
Schottky diodes
Diodes
Surface states
Fermi level
energy distribution
Temperature
Vapor phase epitaxy
Bias voltage
Field emission
Carrier concentration
field emission
Current density
Metals
diodes
traps
current density
saturation
temperature
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Borrego, J. M. ; Gutmann, R. J. ; Ashok, S. / Interface state density in Au-nGaAs Schottky diodes. In: Solid State Electronics. 1977 ; Vol. 20, No. 2. pp. 125-132.
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Interface state density in Au-nGaAs Schottky diodes. / Borrego, J. M.; Gutmann, R. J.; Ashok, S.

In: Solid State Electronics, Vol. 20, No. 2, 02.1977, p. 125-132.

Research output: Contribution to journalArticle

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