Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures

G. D. Lian, E. C. Dickey, S. H. Chun, K. C. Ku, Nitin Samarth

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The chemical composition and surface structure of ZnSe/Ga1-xMnxAs/ZnSe heterostructures were discussed. A high density of stacking faults was observed in the ZnSe layer, whereas all the other layers grown epitaxially were found to be free of planar defects. The manganese valence was found as 2+ and the composition of the ferromagnetic layer was found to be Ga0.93Mn0.07As.

Original languageEnglish (US)
Pages (from-to)3656-3658
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number21
DOIs
StatePublished - May 26 2003

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chemistry
crystal defects
manganese
chemical composition
valence
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lian, G. D. ; Dickey, E. C. ; Chun, S. H. ; Ku, K. C. ; Samarth, Nitin. / Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures. In: Applied Physics Letters. 2003 ; Vol. 82, No. 21. pp. 3656-3658.
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Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures. / Lian, G. D.; Dickey, E. C.; Chun, S. H.; Ku, K. C.; Samarth, Nitin.

In: Applied Physics Letters, Vol. 82, No. 21, 26.05.2003, p. 3656-3658.

Research output: Contribution to journalArticle

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AU - Dickey, E. C.

AU - Chun, S. H.

AU - Ku, K. C.

AU - Samarth, Nitin

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