Interface structures in MgB 2 thin films on (0001) SiC

J. S. Wu, N. Jiang, B. Jiang, J. C.H. Spence, A. V. Pogrebnyakov, Joan Marie Redwing, X. X. Xi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

Original languageEnglish (US)
Pages (from-to)1155-1157
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number7
DOIs
StatePublished - Aug 16 2004

Fingerprint

thin films
minorities
electron microscopy
energy dissipation
vapor deposition
high resolution
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, J. S., Jiang, N., Jiang, B., Spence, J. C. H., Pogrebnyakov, A. V., Redwing, J. M., & Xi, X. X. (2004). Interface structures in MgB 2 thin films on (0001) SiC. Applied Physics Letters, 85(7), 1155-1157. https://doi.org/10.1063/1.1779338
Wu, J. S. ; Jiang, N. ; Jiang, B. ; Spence, J. C.H. ; Pogrebnyakov, A. V. ; Redwing, Joan Marie ; Xi, X. X. / Interface structures in MgB 2 thin films on (0001) SiC. In: Applied Physics Letters. 2004 ; Vol. 85, No. 7. pp. 1155-1157.
@article{8511e1d5639b44f7bba1d18d34f8961a,
title = "Interface structures in MgB 2 thin films on (0001) SiC",
abstract = "The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.",
author = "Wu, {J. S.} and N. Jiang and B. Jiang and Spence, {J. C.H.} and Pogrebnyakov, {A. V.} and Redwing, {Joan Marie} and Xi, {X. X.}",
year = "2004",
month = "8",
day = "16",
doi = "10.1063/1.1779338",
language = "English (US)",
volume = "85",
pages = "1155--1157",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

Wu, JS, Jiang, N, Jiang, B, Spence, JCH, Pogrebnyakov, AV, Redwing, JM & Xi, XX 2004, 'Interface structures in MgB 2 thin films on (0001) SiC', Applied Physics Letters, vol. 85, no. 7, pp. 1155-1157. https://doi.org/10.1063/1.1779338

Interface structures in MgB 2 thin films on (0001) SiC. / Wu, J. S.; Jiang, N.; Jiang, B.; Spence, J. C.H.; Pogrebnyakov, A. V.; Redwing, Joan Marie; Xi, X. X.

In: Applied Physics Letters, Vol. 85, No. 7, 16.08.2004, p. 1155-1157.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interface structures in MgB 2 thin films on (0001) SiC

AU - Wu, J. S.

AU - Jiang, N.

AU - Jiang, B.

AU - Spence, J. C.H.

AU - Pogrebnyakov, A. V.

AU - Redwing, Joan Marie

AU - Xi, X. X.

PY - 2004/8/16

Y1 - 2004/8/16

N2 - The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

AB - The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

UR - http://www.scopus.com/inward/record.url?scp=4444336282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444336282&partnerID=8YFLogxK

U2 - 10.1063/1.1779338

DO - 10.1063/1.1779338

M3 - Article

AN - SCOPUS:4444336282

VL - 85

SP - 1155

EP - 1157

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Wu JS, Jiang N, Jiang B, Spence JCH, Pogrebnyakov AV, Redwing JM et al. Interface structures in MgB 2 thin films on (0001) SiC. Applied Physics Letters. 2004 Aug 16;85(7):1155-1157. https://doi.org/10.1063/1.1779338