Interface traps in silicon carbide MOSFETs

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008
DOIs
StatePublished - 2008
Event2008 IEEE International Integrated Reliability Workshop, IRW 2008 - South Lake Tahoe, CA, United States
Duration: Oct 12 2008Oct 16 2008

Other

Other2008 IEEE International Integrated Reliability Workshop, IRW 2008
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/12/0810/16/08

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Silicon carbide
silicon carbide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2008). Interface traps in silicon carbide MOSFETs. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008 [4796135] https://doi.org/10.1109/IRWS.2008.4796135
Cochrane, C. J. ; Lenahan, Patrick M. ; Lelis, A. J. / Interface traps in silicon carbide MOSFETs. 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. 2008.
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Cochrane, CJ, Lenahan, PM & Lelis, AJ 2008, Interface traps in silicon carbide MOSFETs. in 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008., 4796135, 2008 IEEE International Integrated Reliability Workshop, IRW 2008, South Lake Tahoe, CA, United States, 10/12/08. https://doi.org/10.1109/IRWS.2008.4796135

Interface traps in silicon carbide MOSFETs. / Cochrane, C. J.; Lenahan, Patrick M.; Lelis, A. J.

2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. 2008. 4796135.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Cochrane CJ, Lenahan PM, Lelis AJ. Interface traps in silicon carbide MOSFETs. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. 2008. 4796135 https://doi.org/10.1109/IRWS.2008.4796135