Interface traps in silicon carbide MOSFETs

C. J. Cochrane, P. M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Integrated Reliability Workshop, IRW 2008 - South Lake Tahoe, CA, United States
Duration: Oct 12 2008Oct 16 2008

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2008 IEEE International Integrated Reliability Workshop, IRW 2008
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/12/0810/16/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2008). Interface traps in silicon carbide MOSFETs. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008 [4796135] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2008.4796135