Interfacial defect chemistry in metal oxides: Complementary transmission electron microscopy and impedance spectroscopy studies

Elizabeth C. Dickey, Gaiying Yang, Qinglei Wang, Clive A. Randall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Complex impedance spectroscopy and analytical transmission electron microscopy are used in a complementary fashion to understand the local defect chemistry and electrical properties of grain boundaries and interfaces in metal-oxide ceramics. High spatial resolution chemical analysis, including energy dispersive x-ray spectroscopy and electron energy loss spectroscopy are performed to understand the structure and microchemistry of the individual components of the microstructure (i.e. grain interiors, grain boundaries and interfaces). By measuring the impedance response of the material as a function of temperature, we are able to isolate the contributions of each microstructural component to the net impedance response. These techniques have been utilized to study grain boundary segregation in TiO 2 and degradation mechanisms in BaTiO 3-based multilayer ceramic capacitors.

Original languageEnglish (US)
Title of host publicationInterfaces in Electronic Materials - Proceedings of the International Symposium
Pages187-196
Number of pages10
StatePublished - Jul 20 2006
Event204th Electrochemical Society Fall Meeting - Orlando, FL, United States
Duration: Oct 12 2003Oct 16 2003

Publication series

NameProceedings - Electrochemical Society
VolumePV 2003-31

Other

Other204th Electrochemical Society Fall Meeting
CountryUnited States
CityOrlando, FL
Period10/12/0310/16/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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